Slavica Malobabic

A Review of Core Compact Models for Undoped Double-Gate SOI MOSFETs

In this paper, we review the compact-modeling framework for undoped double-gate (DG) silicon-on-insulator (SOI) MOSFETs. The use of multiple gates has emerged as a new technology to possibly replace the conventional planar MOSFET when its feature size is scaled to the sub-50-nm regime. MOSFET technology has been the choice for mainstream digital circuits for very large scale integration as well as for other high-frequency applications in the low-gigahertz range. But the continuing scaling of MOSFET presents many challenges, and multiple-gate, particularly DG, SOI devices seem to be attractive alternatives as they can effectively reduce the short-channel effects and yield higher current drive. Core compact models, including the analysis for surface potential and drain-current, for both the symmetric and asymmetric DG SOI MOSFETs, are discussed and compared. Numerical simulations are also included in order to assess the validity of the models reviewed

Analytic solution of the channel potential in undoped symmetric dual-gate MOSFETs

We extend our previous Lambert function-based analytic solution for the surface potential of undoped-body single-gate bulk MOSFETs to offer an explicit analytic solution of the surface potential of undoped-body symmetric dual-gate devices. The error produced by the proposed solution compared to exact results is reasonably small for typical device dimensions and bias conditions.

Drain Current and Transconductance Model for the Undoped Body Asymmetric Double-Gate MOSFET

A surface potential-based drain current and transconductance model for undoped-body asymmetric double-gate MOSFETs are presented. They are built on the basis of the front and back surface potentials and a charge coupling variable evaluated at the source and drain ends. The model consists of single analytic equations which are valid for all bias conditions, from subthreshold to strong inversion and from linear to saturation operation. Its validity has been verified by comparison to numerical simulations

A General Analytical solution to the One-Dimensional Undoped Oxide-Silicon-Oxide System

A physical model of the one-dimensional undoped oxide-silicon-oxide system is presented based on the solution of its surface potential versus distance. It is proved that both previous approximate analytical solutions, for the cases when the electric field does and does not vanish inside the semiconductor, are completely equivalent. Approximate asymptotic analytical solutions are presented and compared to exact results numerically calculated by iteration. The results attest to the excellent accuracy of this formulation

Modeling the undoped-body symmetric dual-gate MOSFET

A model of the undoped-body symmetric dual-gate MOSFET is presented based on the explicit analytic solution of its surface potential using the Lambert W function. The total channel carrier charge and drain current may be readily obtained from this solution. Results from the proposed solution are compared to exact results numerically calculated by iteration.

Modeling the Post-Breakdown Current in MOS devices on p-silicon substrate

A model for the post-breakdown leakage current in MOS p-silicon devices with ultra thin oxides is presented. The model is based on a combination of two ideal diodes and two resistances. Model parameters are extracted using nonlinear optimization