Stephen A. St. Onge

Foundation of rf CMOS and SiGe BiCMOS technologies

This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-signal system-on-a-chip (SoC). The paper reviews the process development and integration methodology, presents the device characteristics, and shows how the development and device selection were geared toward usage in mixed-signal IC development.

Product applications and technology directions with SiGe BiCMOS

In this paper we highlight the effectiveness and flexibility of SiGe BiCMOS as a technology platform over a wide range of performance and applications. Examples include high speed device design, power amplifiers, integrated VCOs and very high level integration.

SiGe BiCMOS Trends - Today and Tomorrow

High performance communications applications have made technology choices more important than ever. Silicon germanium (SiGe) BiCMOS has enabled the widespread introduction of many these applications by providing superior cost and integration capability, compared to III-V solutions and, relative to RFCMOS, one can attain better time to market. BiCMOS integration approaches for high performance and cost performance NPN modules and state of the art passive elements are discussed as well as future technology directions