Susumu Kuwabara

Detection of Particles on Quarter µm Thick or Thinner SOI Wafers

It was shown that as a probe for a particle detection system based on the principle of light scattering a 430 nm laser was effective for detecting particles on thin silicon on insulator (SOI) wafers. In particular, a p-polarized oblique incident light beam was more effective than that at normal incidence. This laser was suitable for an SOI structure of down to 0.2 µm SOI layer and 0.2 µm buried oxide (BOX) layer. In addition, it is predicted in terms of the reflectivity of a 430 nm laser that there are the suitable BOX thicknesses in SOI structure of less than 0.1 µm SOI layer thickness.