Takeshi Kajiyama

Memory design using one-transistor gain cell on SOI

A 512 kb DRAM has a 7F/sup 2/ one-transistor gain cell (F=0.18 /spl mu/m) on SOI. The array driving method makes selective write possible. Basic operation is verified by device simulation and hardware measurement. Simulations show 40 ns access time. Non-destructive readout and Cb/Cs-free signal development improve cell efficiency.

A 64Mb MRAM with clamped-reference and adequate-reference schemes

In order to realize a sub-Giga bit scale NVRAM, the novel MRAM based on the spin-transfer-torque (STT) switching has been intensively investigated due to its excellent scalability compared with a conventional magnetic field induce switching MRAM [1]. However, the memory cell size of STT-MRAM reported so far is still over 1µm2, and the memory capacity is limited to 32Mbit even in almost 100mm2 die size [2]. The large cell size is due to the large switching current of MRAM cells. In order to reduce the cell size, we have proposed the perpendicular tunnel magnetoresistance (P-TMR) device, and have confirmed its high potential to achieve lower switching current [3]. In this paper, a 64Mb STTMRAM with the P-TMR device having the circuit techniques to maximize operational margin is described.

Ion Beam Etching Technology for High-Density Spin Transfer Torque Magnetic Random Access Memory

A spin transfer torque magnetoresistive random access memory (STT-MRAM) is the most promising candidate for a non-volatile random access memory, because of its scalability, high-speed operation, and unlimited read/write endurance. An ion beam etching (IBE) is one of the promising etching methods for a magnetic tunnel junction (MTJ) of the STT-MRAM, because it has no after-corrosion and oxidation problems. In this work, we developed the multiple-step wafer-tilted IBE using computer calculation. Using optimized multiple-step IBE conditions, we fabricated MTJs without barrier-short defects.

Reduction of switching current distribution in spin transfer magnetic random access memories

In this paper, the switching current distribution by spin transfer torque is investigated for CoFeB∕MgO∕CoFeB magnetic tunnel junctions (MTJs). The distribution of the spin transfer switching current for a MTJ with junction size of 85×110nm2 is 16% when the duration of applied pulse current is 5ms. In the case of magnetization reversal with magnetic field induced by current with 5ms pulse duration, the distribution of the switching field is 8.3%. According to our micromagnetic simulation, it is found that the spin transfer current switching seems to exhibit a nonuniform magnetization reversal process, whereas the magnetization switching by the magnetic field exhibits a uniform magnetization reversal process. This leads to the broader distribution related to the repeatability.In this paper, the switching current distribution by spin transfer torque is investigated for CoFeB∕MgO∕CoFeB magnetic tunnel junctions (MTJs). The distribution of the spin transfer switching current for a MTJ with junction size of 85×110nm2 is 16% when the duration of applied pulse current is 5ms. In the case of magnetization reversal with magnetic field induced by current with 5ms pulse duration, the distribution of the switching field is 8.3%. According to our micromagnetic simulation, it is found that the spin transfer current switching seems to exhibit a nonuniform magnetization reversal process, whereas the magnetization switching by the magnetic field exhibits a uniform magnetization reversal process. This leads to the broader distribution related to the repeatability.

A 16Mb MRAM with FORK Wiring Scheme and Burst Modes

A 16Mb MRAM based on 0.13mum CMOS and 0.24mum MRAM process achieves a 34ns asynchronous access and 100MHz synchronous operation, compatible with pseudo-SRAM for mobile applications. By implementation of FORK wiring scheme, the cell efficiency is raised to 39.9% and the disturb robustness of half-selection state is improved

Magnetic and Writing Properties of Clad Lines Used in a Toggle MRAM

We fabricated toggle magnetic random access memories with clad writing lines. First, we evaluated the structures and magnetic properties of sputter-deposited cladding layers. The substrate bias during the deposition affected not only the sidewall coverage, but also the crystallinity and magnetic properties of the cladding. The optimized clad lines reduced the writing current to as low as 50% of that of unclad lines. Moreover, the writing current deviation divided by the average current of magnetic tunnel junction cells with clad lines was as low as that with unclad lines. Using the optimized clad lines, we constructed memory arrays with a large operating margin and reduced switching current

1.8 V Power Supply 16 Mb-MRAMs With 42.3% Array Efficiency

Technologies for realizing high density MRAM were developed. First, new circuitry to lower the resistance of programming wires was developed. Second, both MTJ plane shape and cross-sectional structure were optimized to lower the programming current. Based on these two technologies, 16 Mb MRAM was designed, fabricated with 130 nm CMOS process and 240 nm back end MTJ process. As a result, a 1.8 V power supply MRAM with 42.3% array efficiency was successfully demonstrated

High-Speed Flexible Optical Disk for Broadcast Archival Storage

We developed a prototype of a flexible optical disk (FOD) drive with a mechanical stabilizer. We prepared the FOD that had a high recording sensitivity of a recording layer and had low byte error rates below 2 ×10-4 at speeds from 36 to 252 Mbps, and examined the recording of video data on the FOD and the drive. We could record and play a high-definition television (HDTV) video (MPEG-2, 422P@HL) seamlessly at 144 Mbps over the entire area of the FOD and the FOD drive with broadcast video systems. We confirmed that the FOD and the FOD drive can record and play HDTV signals for professional broadcast use.

Effect of Interface Buffer Layer on the Reliability of Ultra-Thin MgO Magnetic Tunnel Junctions for Spin Transfer Switching MRAM

Study of the reliability of ultra-thin MgO tunneling barriers for spin transfer switching magnetoresistive random access memory (MRAM) revealed MgO to be an excellent film with little resistance drift. Precise control of CoFeB/MgO/CoFeB interface was found to be important for making highly reliable tunneling barriers.

Near-Field Optical Recording Using Solid Immersion Lens for High-Density Flexible Optical Disks

We propose a near-field optical recording flexible optical disk (NFR-FOD) for high-density recording at a high data transfer rate. We built a prototype high-density NFR-FOD that had a track pitch of 0.16 µm and we stacked some recording layers on a thin substrate that was 0.1 mm thick. We rotated the NFR-FOD closing the mechanical stabilizer on a drive system with less than 10 µmp–p axial run-out and achieved precise gap servo operation at a high rotational speed. We demonstrated near-field optical recording with a solid immersion lens with a numerical aperture (NA) of 1.84 on the NFR-FOD. The NFR-FOD has a fourfold higher recording density than the current Blu-ray disc, corresponding to a capacity of 100 Gbytes per layer, and a high data transfer rate of 250 Mbps, while rotating at half the speed.