Thomas Strach
IBM
Network
Latest external collaboration on country level. Dive into details by clicking on the dots.
Publication
Featured researches published by Thomas Strach.
international solid-state circuits conference | 2011
James D. Warnock; Yuen Chan; William V. Huott; Sean M. Carey; Michael Fee; Huajun Wen; M. J. Saccamango; Frank Malgioglio; Patrick J. Meaney; Donald W. Plass; Yuen H. Chan; Mark D. Mayo; Guenter Mayer; Leon J. Sigal; David L. Rude; Robert M. Averill; Michael H. Wood; Thomas Strach; Howard H. Smith; Brian W. Curran; Eric M. Schwarz; Lee Evan Eisen; Doug Malone; Steve Weitzel; Pak-Kin Mak; Thomas J. McPherson; Charles F. Webb
The microprocessor chip for the IBM zEnterprise 196 (z 196) system is a high-frequency, high-performance design that adds support for out-of-order instruction execution and increases operating frequency by almost 20% compared to the previous 65nm design, while still fitting within the same power envelope. Despite the many difficult engineering hurdles to be overcome, the design team was able to achieve a product frequency of 5.2GHz, providing a significant performance boost for the new system.
IEEE Journal of Solid-state Circuits | 2012
James D. Warnock; Yiu-Hing Chan; Sean M. Carey; Huajun Wen; Patrick J. Meaney; Guenter Gerwig; Howard H. Smith; Yuen H. Chan; John S. Davis; Paul A. Bunce; Antonio R. Pelella; Daniel Rodko; Pradip Patel; Thomas Strach; Doug Malone; Frank Malgioglio; José Luis Neves; David L. Rude; William V. Huott
This paper describes the circuit and physical design features of the z196 processor chip, implemented in a 45 nm SOI technology. The chip contains 4 super-scalar, out-of-order processor cores, running at 5.2 GHz, on a die with an area of 512 mm2 containing an estimated 1.4 billion transistors. The core and chip design methodology and specific design features are presented, focusing on techniques used to enable high-frequency operation. In addition, chip power, IR drop, and supply noise are discussed, being key design focus areas. The chips ground-breaking RAS features are also described, engineered for maximum reliability and system stability.
international symposium on microarchitecture | 2014
Ramon Bertran; Alper Buyuktosunoglu; Pradip Bose; Timothy J. Slegel; Gerard M. Salem; Sean M. Carey; Richard F. Rizzolo; Thomas Strach
Voltage noise characterization is an essential aspect of optimizing the shipped voltage of high-end processor based systems. Voltage noise, i.e. Variations in the supply voltage due to transient fluctuations on current, can negatively affect the robustness of the design if it is not properly characterized. Modeling and estimation of voltage noise in a pre-silicon setting is typically inadequate because it is difficult to model the chip/system packaging and power distribution network (PDN) parameters very precisely. Therefore, a systematic, direct measurement-based characterization of voltage noise in a post-silicon setting is mandatory in validating the robustness of the design. In this paper, we present a direct measurement-based voltage noise characterization of a state-of-the-art mainframe class multicoreprocessor. We develop a systematic methodology to generate noise stress marks. We study the sensitivity of noise in relation to the different parameters involved in noise generation: (a) stimulus sequence frequency, (b) supply current delta, (c) number of noise events and, (d) degree of alignment or synchronization of events in a multi-core context. By sensing per-core noise in a multi-core chip, we characterize the noise propagation across the cores. This insight opens up new opportunities for noise mitigation via workload mappings and dynamic voltage guard banding.
IEEE Journal of Solid-state Circuits | 2014
James D. Warnock; Yuen H. Chan; Hubert Harrer; Sean M. Carey; Gerard M. Salem; Doug Malone; Ruchir Puri; Jeffrey A. Zitz; Adam R. Jatkowski; Gerald Strevig; Ayan Datta; Anne E. Gattiker; Aditya Bansal; Guenter Mayer; Yiu-Hing Chan; Mark D. Mayo; David L. Rude; Leon J. Sigal; Thomas Strach; Howard H. Smith; Huajun Wen; Pak-Kin Mak; Chung-Lung Kevin Shum; Donald W. Plass; Charles F. Webb
This work describes the circuit and physical design implementation of the processor chip (CP), level-4 cache chip (SC), and the multi-chip module at the heart of the EC12 system. The chips were implemented in IBMs high-performance 32nm high-k/metal-gate SOI technology. The CP chip contains 6 super-scalar, out-of-order processor cores, running at 5.5 GHz, while the SC chip contains 192 MB of eDRAM cache. Six CP chips and two SC chips are mounted on a high-performance glass-ceramic substrate, which provides high-bandwidth, low-latency interconnections. Various aspects of the design are explored in detail, with most of the focus on the CP chip, including the circuit design implementation, clocking, thermal modeling, reliability, frequency tuning, and comparison to the previous design in 45nm technology.
Ibm Journal of Research and Development | 2012
Thomas Strach; Frank E. Bosco; Kenneth L. Christian; Kevin R. Covi; Martin Eckert; Gregory R. Edlund; Roland Frech; Hubert Harrer; Andreas Huber; Dierk Kaller; Martin Kindscher; A. Z. Muszynski; G. A. Peterson; Claudio Siviero; Jochen Supper; Otto Torreiter; Thomas-Michael Winkel
In this paper, we describe the first- and second-level system packaging structure of the IBM zEnterprise® 196 (z196) enterprise-class server. The design point required a more than 50% overall increase in system performance (in millions of instructions per second) in comparison to its predecessor. This resulted in a new system design that includes, among other things, increased input/output bandwidth, more processors with higher frequencies, and increased current demand of more than 2,000 A for the six processor chips and two cache chips per multichip module. To achieve these targets, we implemented several new packaging technologies. The z196 enterprise-class server uses a new differential memory interface between the processor chips and custom-designed server memory modules. The electrical power delivery system design follows a substantially new approach using Vicor Factor Power® blocks, which results in higher packaging integration density and minimized package electrical losses. The power noise decoupling strategy was changed because of the availability of deep-trench technology on the new processor chip generation.
Ibm Journal of Research and Development | 2015
Tobias Webel; Preetham M. Lobo; Ramon Bertran; Gerard M. Salem; Malcolm S. Allen-Ware; Richard F. Rizzolo; Sean M. Carey; Thomas Strach; Alper Buyuktosunoglu; Charles R. Lefurgy; Pradip Bose; Ricardo H. Nigaglioni; Timothy J. Slegel; Michael Stephen Floyd; Brian W. Curran
The power management strategy adopted for the IBM z13™ processor chip (referred to as the CP or Central Processor chip) is guided by three basic principles: (a) controlling the peak power consumption by setting a realistic limit on the so-called thermal design power or thermal design point (TDP) driven by customer workloads and maximum-power stress microbenchmarks; (b) reduction of the voltage margin by using a novel dynamic guard-banding technique; and (c) the creation of a rich new set of fine-grained, time-synchronized sensors that track performance, power, temperature, and power management behavior for a running machine. A prime requirement of the power management architecture is that the efficient control mechanisms be designed in such a manner that the high standards of IBM z Systems™ application performance and reliability be maintained without any compromise. In this paper, we describe the key features constituting the z13 CP robust power management architecture and design that meet the stipulated objectives.
international solid-state circuits conference | 2013
James D. Warnock; Yuen H. Chan; Hubert Harrer; David L. Rude; Ruchir Puri; Sean M. Carey; Gerard M. Salem; Guenter Mayer; Yiu-Hing Chan; Mark D. Mayo; Adam R. Jatkowski; Gerald Strevig; Leon J. Sigal; Ayan Datta; Anne E. Gattiker; Aditya Bansal; Doug Malone; Thomas Strach; Huajun Wen; Pak-Kin Mak; Chung-Lung Kevin Shum; Donald W. Plass; Charles F. Webb
The new System z microprocessor chip (“CP chip”) features a high-frequency processor core running at 5.5GHz in a 32nm high-κ CMOS technology [1], using 15 levels of metal. This chip is a successor to the 45nm product [2], with significant improvements made to the core and nest (i.e. the logic external to the cores) in order to increase the performance and throughput of the design. Also, special considerations were necessary to ensure robust circuit operation in the high-κ technology used for implementation. As seen in the die photo, the chip contains 6 processor cores (compared to 4 cores in the 45nm version), and a large shared 48MB DRAM L3 cache. Each core includes a pair of data and instruction L2 SRAM caches of 1MB each. In addition, the chip contains a memory control unit (MCU), an I/O bus controller (GX), and two sets of interfaces to the L4 cache chips (also in 32nm technology). The CP chip occupies 598 mm2, contains about 2.75B transistors, and has 1071 signal IOs.
Ibm Journal of Research and Development | 2015
Wiren D. Becker; Hubert Harrer; Andreas Huber; William L. Brodsky; R. Krabbenhoft; Michael Cracraft; Dierk Kaller; Gregory R. Edlund; Thomas Strach
IBM z13 processor drawer W. D. Becker H. Harrer A. Huber W. L. Brodsky R. Krabbenhoft M. A. Cracraft D. Kaller G. Edlund T. Strach The electronic packaging of the IBM z13i is the foundation for a processor drawer that provides a significant increase in processing power relative to the IBM zEnterpriseA EC12 (zEC12) system while managing power and cost to meet the z13 product objectives. The z13 system architecture differs from previous high-end z Systemsi designs due to the introduction of a drawer-based processor design, organic single-chip modules (SCMs) in place of the ceramic MCMs (multi-chip modules), and a cabled interconnect between drawers in place of the PCB (printed circuit board) backplane of the zEC12. These innovations are coupled with next-generation signaling interfaces, providing a significant increase in signal bandwidth. The next-generation voltage regulation and decoupling provides the efficient power delivery needed to build a new processor subsystem with 40% more processor cores than the zEC12. The memory bandwidth and capacity have more than tripled, and the input/output bandwidth of the processor chip doubled to provide excellent scalability at the processor socket, drawer, and system level. The electronic packaging has been designed to meet all of these challenges, and this paper presents the design and integration of the electronic packaging of the z13 system.
Ibm Journal of Research and Development | 2009
Thomas-Michael Winkel; Hubert Harrer; Dierk Kaller; Jochen Supper; Daniel M. Dreps; Kenneth L. Christian; D. Cosmadelis; Tingdong Zhou; Thomas Strach; J. Ludwig; David L. Edwards
This paper describes the system packaging and technologies of the IBM System z10™ high-end Enterprise Class server. This machine exceeds the multiprocessor performance of the previous system by 50%. A new generation of the IBM Elastic Interface was developed in order to maintain the increased interconnect signal speed of up to 2.93 Gb/s. Power control and power delivery to the multicore processors were a special challenge for the server packaging because of the high currents and the high number of voltage domains.
Ibm Journal of Research and Development | 2015
James D. Warnock; C. Berry; M. H. Wood; Leon J. Sigal; Yuen H. Chan; G. Mayer; Mark D. Mayo; Yiu-Hing Chan; F. Malgioglio; G. Strevig; C. Nagarajan; Sean M. Carey; Gerard M. Salem; F. Schroeder; Howard H. Smith; D. Phan; Ricardo H. Nigaglioni; Thomas Strach; M. M. Ziegler; N. Fricke; K. Lind; J. L. Neves; S. H. Rangarajan; J. P. Surprise; J. M. Isakson; J. Badar; D. Malone; Donald W. Plass; A. Aipperspach; Dieter Wendel
The two chips at the heart of the IBM z13™ system include a processor chip (referred to as the CP or Central Processor chip) and an L4 (Level 4) cache chip (referred to as the SC or System Controller chip), each 678 mm2 in area. The CP and SC chips were implemented with approximately 4 billion (4 × 109) and 7.1 billion transistors, respectively, in IBMs 22-nm SOI (silicon-on-insulator) technology, supporting eDRAM (embedded dynamic random access memory), and with up to 17 levels of metal available. In this paper, we discuss aspects of the circuit and physical design of these chips, including both digital logic and custom array implementation. In addition, we describe the design analysis methodology, along with some of the checks needed to ensure a robust, reliable, and high-frequency product.