Gerard M. Salem

A 480 MHz RISC microprocessor in a 0.12 /spl mu/m L/sub eff/ CMOS technology with copper interconnects

A 32 b 480 MHz PowerPC reduced-instruction-set-computer (RISC) microprocessor is migrated into an advanced 0.2 /spl mu/m CMOS technology with copper interconnects and multi-threshold transistors. These technology features have helped to increase the microprocessor internal clock frequency to 480 MHz at 2.0 V and 85/spl deg/C, and at the fast end of the process distribution. When operating at room temperature, the clock frequency increases to over 500 MHz. The microprocessor architecture includes two 32 KB L1 caches, one for data and one for instructions, integrated L2 cache controller working with L2 caches of 256 KB, 512 KB, or 1MB, and I/Os interfacing with the external bus using industry-standard 3.3 V. The microprocessor is implemented in 2.5 V CMOS technology and has migrated to 1.8 V CMOS technology.

On-chip timing uncertainty measurements on IBM microprocessors

Timing uncertainty in microprocessors is comprised of several sources including PLL jitter, clock distribution skew and jitter, across chip device variations, and power supply noise. The on-chip measurement macro called SKITTER (SKew+jITTER) was designed to measure timing uncertainty from all combined sources by measuring the number of logic stages that complete in a cycle. This measure of completed delay stages has proven to be a very sensitive monitor of power supply noise, which has emerged as a dominant component of timing uncertainty. This paper describes the Skitter measurement experiences of several IBM microprocessors including PPC970MP, XBOX360TM, CELL Broadband EngineTM, and POWER6TM microprocessors running different workloads.

A 580 MHz RISC microprocessor in SOI

A RISC microprocessor remapped in SOI technology exploits the advantages of SOI to boost processor frequency by 20% to 580MHz at 2.0V and 85/spl deg/C and fast process. The separation by implanted oxygen (SIMOX) SOI process produces partially-depleted devices. Source and drain capacitances are reduced by an order of magnitude, improving gate delay by 12%. Reduction in body-bias effects on device stacks and passgate topologies results in an additional 15%-25% improvement. Speed gains of up to 35% are achieved in some designs. The frequency-limiting paths in this processor are dominated by SRAM access and self-timed dynamic circuits whose timing had to be relaxed to guarantee functionality.

A low-power RISC microprocessor using dual PLLs in a 0.13 /spl mu/m SOI technology with copper interconnect and low-k BEOL dielectric

Microprocessors achieving clock frequencies >1 GHz for mobile applications require solutions to maintain long battery life. Circuit and architecture solutions for dynamic frequency switching between multiple PLLs, DC power reduction methods, and impact of low-k dielectric on timing and power are discussed.

Voltage Noise in Multi-Core Processors: Empirical Characterization and Optimization Opportunities

Voltage noise characterization is an essential aspect of optimizing the shipped voltage of high-end processor based systems. Voltage noise, i.e. Variations in the supply voltage due to transient fluctuations on current, can negatively affect the robustness of the design if it is not properly characterized. Modeling and estimation of voltage noise in a pre-silicon setting is typically inadequate because it is difficult to model the chip/system packaging and power distribution network (PDN) parameters very precisely. Therefore, a systematic, direct measurement-based characterization of voltage noise in a post-silicon setting is mandatory in validating the robustness of the design. In this paper, we present a direct measurement-based voltage noise characterization of a state-of-the-art mainframe class multicoreprocessor. We develop a systematic methodology to generate noise stress marks. We study the sensitivity of noise in relation to the different parameters involved in noise generation: (a) stimulus sequence frequency, (b) supply current delta, (c) number of noise events and, (d) degree of alignment or synchronization of events in a multi-core context. By sensing per-core noise in a multi-core chip, we characterize the noise propagation across the cores. This insight opens up new opportunities for noise mitigation via workload mappings and dynamic voltage guard banding.

Circuit and Physical Design of the zEnterprise™ EC12 Microprocessor Chips and Multi-Chip Module

This work describes the circuit and physical design implementation of the processor chip (CP), level-4 cache chip (SC), and the multi-chip module at the heart of the EC12 system. The chips were implemented in IBMs high-performance 32nm high-k/metal-gate SOI technology. The CP chip contains 6 super-scalar, out-of-order processor cores, running at 5.5 GHz, while the SC chip contains 192 MB of eDRAM cache. Six CP chips and two SC chips are mounted on a high-performance glass-ceramic substrate, which provides high-bandwidth, low-latency interconnections. Various aspects of the design are explored in detail, with most of the focus on the CP chip, including the circuit design implementation, clocking, thermal modeling, reliability, frequency tuning, and comparison to the previous design in 45nm technology.

PowerPC 970 in 130 nm and 90 nm technologies

A 64 b PowerPC microprocessor is introduced in 130 nm and redesigned in 90 nm SOI technology. PowerPC 970 implements a SIMD instruction set with 512 kB L2 cache. It runs at 2.0 GHz with a 1.0 GHz bus in 130 nm. The 90 nm design features PowerTune for rapid frequency and power scaling and electronic fuses.

4.1 22nm Next-generation IBM System z microprocessor

The next-generation System z design introduces a new microprocessor chip (CP) and a system controller chip (SC) aimed at providing a substantial boost to maximum system capacity and performance compared to the previous zEC12 design in 32nm [1,2]. As shown in the die photo, the CP chip includes 8 high-frequency processor cores, 64MB of eDRAM L3 cache, interface IOs (“XBUS”) to connect to two other processor chips and the L4 cache chip, along with memory interfaces, 2 PCIe Gen3 interfaces, and an I/O bus controller (GX). The design is implemented on a 678 mm2 die with 4.0 billion transistors and 17 levels of metal interconnect in IBMs high-performance 22nm high-x CMOS SOI technology [3]. The SC chip is also a 678 mm2 die, with 7.1 billion transistors, running at half the clock frequency of the CP chip, in the same 22nm technology, but with 15 levels of metal. It provides 480 MB of eDRAM L4 cache, an increase of more than 2× from zEC12 [1,2], and contains an 18 MB eDRAM L4 directory, along with multi-processor cache control/coherency logic to manage inter-processor and system-level communications. Both the CP and SC chips incorporate significant logical, physical, and electrical design innovations.

A 64B CPU Pair: Dual- and Single-Processor Chips

Two Powertrade-architecture 64b microprocessor chips are fabricated in 90nm dual strained-silicon SOI technology. The dual-processor chip has split clock domains and power planes, 1 MB L2 cache per core and a shared processor interconnect bus. The single-processor chip shares the duals basic core and cache design

Robust power management in the IBM z13

The power management strategy adopted for the IBM z13™ processor chip (referred to as the CP or Central Processor chip) is guided by three basic principles: (a) controlling the peak power consumption by setting a realistic limit on the so-called thermal design power or thermal design point (TDP) driven by customer workloads and maximum-power stress microbenchmarks; (b) reduction of the voltage margin by using a novel dynamic guard-banding technique; and (c) the creation of a rich new set of fine-grained, time-synchronized sensors that track performance, power, temperature, and power management behavior for a running machine. A prime requirement of the power management architecture is that the efficient control mechanisms be designed in such a manner that the high standards of IBM z Systems™ application performance and reliability be maintained without any compromise. In this paper, we describe the key features constituting the z13 CP robust power management architecture and design that meet the stipulated objectives.