Tino Ruland
Technische Universität Darmstadt
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Publication
Featured researches published by Tino Ruland.
european solid-state device research conference | 2003
Udo Schwalke; Yordan Stefanov; Rama Komaragiri; Tino Ruland
We have successfully completed the process integration of crystalline praseodymium oxide (Pr/sub 2/O/sub 3/) high-k gate dielectric in order to fabricate fully functional Pr/sub 2/O/sub 3/ MOSFETs with gate leakages <10/sup -6/ A/cm/sup 2/. Gate leakage is found to be size dependent and may be related to defects at Pr/sub 2/O/sub 3/ grain boundaries. Although fully functional, Pr/sub 2/O/sub 3/ NMOS transistors showed a lower performance when compared to conventional SiO/sub 2/ MOSFETs with the same EOT. The performance degradation is attributed to mobility reduction due to large amounts of trapped charges. In addition, a reversible Vt-instability is observed, even at operating conditions. These results suggest that charging/discharging of defects via tunneling within Pr/sub 2/O/sub 3/ and near the interfaces is a likely mechanism.
Journal of Non-crystalline Solids | 2005
H. D. B. Gottlob; Max C. Lemme; T. Mollenhauer; Thorsten Wahlbrink; J. K. Efavi; H. Kurz; Yordan Stefanov; Klaus Haberle; Rama Komaragiri; Tino Ruland; Florian Zaunert; Udo Schwalke
Archive | 2005
Tino Ruland; Ralf Endres; Udo Schwalke
Archive | 2007
Frank Wessely; Tino Ruland; Udo Schwalke
Archive | 2007
Frank Wessely; Tino Ruland; Udo Schwalke
Archive | 2006
Lorraine Rispal; Frank Wessely; Yordan Stefanov; Tino Ruland; Udo Schwalke
Meeting Abstracts | 2006
Lorraine Rispal; Tino Ruland; Yordan Stefanov; Frank Wessely; Udo Schwalke
Archive | 2005
Tino Ruland; Ralf Endres; Udo Schwalke
Archive | 2004
Tino Ruland; Yordan Stefanov; Lorraine Rispal; Udo Schwalke
Archive | 2004
Yordan Stefanov; Rama Komaragiri; Tino Ruland; Udo Schwalke
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