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Dive into the research topics where Tomoshi Futatsuya is active.

Publication


Featured researches published by Tomoshi Futatsuya.


symposium on vlsi circuits | 1992

A new decoding scheme and erase sequence for 5 V only sector erasable flash memory

Takeshi Nakayama; Shinichi Kobayashi; Yoshikazu Miyawaki; Tomoshi Futatsuya; Yasushi Terada; Natsuo Ajika; Tsutomu Yoshihara

The authors describe a decoding scheme and erase sequence for a 5-V-only sector-erasable flash memory. A source line decoder eliminates the erase disturb problem and lowers the power consumption. The maximum switching voltage is reduced to 10 V, which makes possible a tight word line pitch for a 64-Mb flash memory. Narrow threshold voltage distribution of erased memory cells is obtained by programming after erase.<<ETX>>


Archive | 1996

Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor

Shinichi Kobayashi; Yasushi Terada; Yoshikazu Miyawaki; Takeshi Nakayama; Tomoshi Futatsuya; Natsuo Ajika; Yuichi Kunori; Hiroshi Onoda; Atsushi Fukumoto; Makoto Ohi


Archive | 1992

Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming

Shinichi Kobayashi; Takeshi Nakayama; Yoshikazu Miyawaki; Tomoshi Futatsuya; Yasushi Terada


Archive | 1992

Electrically erasable and programmable non-volatile memory device and a method of operating the same

Shinichi Kobayashi; Yasushi Terada; Takeshi Nakayama; Yoshikazu Miyawaki; Tomoshi Futatsuya


Archive | 1991

Nonvolatile semiconductor memory device and data erasing method thereof

Yasushi Terada; Takeshi Nakayama; Shinichi Kobayashi; Yoshikazu Miyawaki; Masanori Hayashikoshi; Tomoshi Futatsuya


Archive | 1993

Internal voltage generator for a non-volatile semiconductor memory device

Takeshi Nakayama; Yasushi Terada; Yoshikazu Miyawaki; Tomoshi Futatsuya; Shinichi Kobayashi


Archive | 1995

Nonvolatile semiconductor memory device with a row redundancy circuit

Tomoshi Futatsuya; Masaaki Mihara; Yasushi Terada; Takeshi Nakayama; Yoshikazu Miyawaki; Shinichi Kobayashi; Minoru Ohkawa


Archive | 1995

Non-volatile semiconductor memory device allowing fast verifying operation

Shinichi Kobayashi; Hiroaki Nakai; Motoharu Ishii; Atsushi Ohba; Tomoshi Futatsuya; Akira Hosogane


Archive | 1998

Internal potential generation circuit that can output a plurality of potentials, suppressing increase in circuit area

Tomoshi Futatsuya; Atsushi Ohba


Archive | 2000

Nonvolatile memory with background operation function

Tomoshi Futatsuya; Yoshikazu Miyawaki

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