V. De Heyn

Ultra-wide-band transmitter for low-power wireless body area networks: design and evaluation

The successful realization of a wireless body area network (WBAN) requires innovative solutions to meet the energy consumption budget of the autonomous sensor nodes. The radio interface is a major challenge, since its power consumption must be reduced below 100 /spl mu/W (energy scavenging limit). The emerging ultra-wide-band (UWB) technology shows strong advantages in reaching this target. First, most of the complexity of an UWB system is in the receiver, which is a perfect scenario in the WBAN context. Second, the very little hardware complexity of a UWB transmitter offers the potential for low-cost and highly integrated solutions. Finally, in a pulse-based UWB scheme, the transmitter can be duty-cycled at the pulse rate, thereby reducing the baseline power consumption. We present a low-power UWB transmitter that can be fully integrated in standard CMOS technology. Measured performances of a fully integrated pulse generator are provided, showing the potential of UWB for low power and low cost implementations. Finally, using a WBAN channel model, we present a comparison between our UWB solution and state-of-the-art low-power narrow-band implementations. This paper shows that UWB performs better in the short range due to a reduced baseline power consumption.

A 0.65-to-1.4 nJ/Burst 3-to-10 GHz UWB All-Digital TX in 90 nm CMOS for IEEE 802.15.4a

We propose an all-digital UWB transmitter architecture that exploits the low duty cycle of impulse-radio UWB to achieve ultra-low power consumption. The design supports the IEEE 802.15.4a standard and is demonstrated for its mandatory mode. A digitally controlled oscillator produces the RF carrier between 3 and 10 GHz. It is embedded in a phase-aligned frequency-locked loop that starts up in 2 ns and thus exploits the signal duty cycle that can be as low as 3%. A fully dynamic modulator shapes the BPSK symbols in discrete steps at the 499.2 MHz chip rate as required by the standard. The transmitter can operate in any 499.2 MHz band of the standard between 3.1 and 10 GHz, and the generated signal fulfills the emission spectral mask. The jitter accumulation over a burst is below 6 psRMS, which is within specifications. The transmitter was realized in a 1 V 90 nm digital CMOS technology, and its power consumption drawn from a 1 V supply is from 0.65 mW at 3.1 GHz to 1.4 mW at 10 GHz for a 1 Mb/s data rate.

A CMOS Ultra-Wideband Receiver for Low Data-Rate Communication

A low-power impulse-radio ultra-wideband receiver is demonstrated for low data-rate applications. A topology selection study demonstrates that the quadrature analog correlation is a good receiver architecture choice when energy consumption must be minimized. The receiver operates in the 3.1-5 GHz band of the UWB FCC spectrum mask on channels of 500 MHz bandwidth. The pulse correlation operation is done in the analog domain in order to reduce the ADC sampling speed down to the pulse repetition rate, thereby reducing the power consumption. The receiver comprises a low-noise amplifier with full on-chip matching network, an RF local oscillator generation, two quadrature mixers, two analog baseband chains followed by two ADCs, and a clock generation network. The receiver is implemented in 0.18 mum CMOS technology and achieves 16 mA power consumption at 20 Mpulses/s pulse repetition rate.

A 16mA UWB 3-to-5GHz 20Mpulses/s Quadrature Analog Correlation Receiver in 0.18/spl mu/m CMOS

A 3-to-5GHz quadrature analog correlation RX for UWB impulse radio draws 16mA at 20Mpulses/s, making it suitable for low-power low-data-rate applications. The RX is fully integrated in a CMOS 0.18mum process and comprises an LNA, quadrature LO generation and mixers, baseband filtering, an integrator, timing circuitry, and an ADC

Design and analysis of new protection structures for smart power technology with controlled trigger and holding voltage

The physical mechanisms that influence the triggering and holding voltage in a DMOS transistor in CMOS smart power technology are investigated. We demonstrate that a high and a low holding voltage device can be designed by changing the lateral bipolar base distance and that also the trigger voltage can be easily tuned. The layout variation that controls the holding voltage also leads to a different snapback mechanism and a different current flow through the device. Excellent ESD capabilities of 16-20 mA//spl mu/m width have been achieved.

Influence of gate length on ESD-performance for deep sub micron CMOS technology

The ESD performance of grounded-gate nMOS protection structures has been observed for a standard 0.25 /spl mu/m CMOS epitaxial layer based technology. The shortest gate lengths show unexpectedly lower ESD thresholds, leading to an optimum performance for longer gate length devices attributed to the trade-off between power dissipation and melt volume of the parasitic bipolar device.

The Potential of FinFETs for Analog and RF Circuit Applications

CMOS downscaling in the nanoscale era will necessitate drastic changes to the planar bulk CMOS transistor to keep pace with the required speed increase while at the same time maintaining acceptable performance in terms of leakage, variability and analog parameters such as gain, noise and linearity. For the gate electrode and the gate dielectric, which classically use polysilicon and with some amount of nitridation, new materials might be needed. Also, a new transistor architecture might be required that deviates from the planar structure. Thanks to their inherent suppression of short-channel effects, reduced drain-induced barrier lowering and good scalability, multi-gate devices such as fin-shaped field-effect transistors (FinFETs) are considered as possible candidates for device scaling at the end of International Technology Roadmap for Semiconductors. As such, they form a first step between a planar architecture and a silicon nanowire. In this paper, we demonstrate with functional prototypes of analog and RF circuits that the combination of a new gate stack with a FinFET transistor architecture outperforms comparable circuit realizations in planar bulk CMOS for low to moderate speed. Further, the FinFETs exhibit less leakage and show less intra-die variability than their planar bulk counterpart. In the microwave and millimeter-wave frequency region, planar bulk CMOS is still superior. The main challenge for FinFET performance in the coming years is the improvement of the maximum cutoff frequency, which is nowadays limited to 100 GHz.

Carrier-based UWB impulse radio: simplicity, flexibility, and pulser implementation in 0.18-micron CMOS

Emerging impulse-based ultra-wideband (UWB) technology shows strong advantages for the implementation of low-power transceivers. In this paper we propose a carrier-based UWB system that brings two distinctive advantages over other UWB systems: 1) lower power operation due to the fact that signal processing is optimally partitioned between analog and digital baseband; 2) better spectrum utilization enabling spectrum diversity and multi-user systems. One of the core blocks in this UWB system is the pulser that serves as the transmitter RF front-end and that serves as the template generator in the receiver. We demonstrate a carrier-based low-cost and low-power UWB pulser ASIC fabricated in a 0.18 /spl mu/m CMOS digital process. The power measurements indicate that our UWB pulser ASIC outperforms the other low-data rate solutions due to its lower baseline power consumption.

Characterization and modeling of transient device behavior under CDM ESD stress

Device physical effects that strongly influence the transient behavior during very fast, high current pulses are discussed. The effects are studied by experimental characterization and device simulation. The dependence on the technology (deep-sub-micron, smart-power/high-voltage) is considered as well. Compact models for CDM circuit simulation are developed.

Influence of gate length on ESD-performance for deep submicron CMOS technology

The ESD performance of grounded-gate nMOS protection structures has been observed for a standard 0.25 /spl mu/m CMOS epitaxial layer based technology. The shortest gate lengths show unexpectedly lower ESD thresholds, leading to an optimum performance for longer gate length devices attributed to the trade-off between power dissipation and melt volume of the parasitic bipolar device.