Xiaoxiong Gu

Physics-Based Via and Trace Models for Efficient Link Simulation on Multilayer Structures Up to 40 GHz

Analytical models for vias and traces are presented for simulation of multilayer interconnects at the package and printed circuit board levels. Vias are modeled using an analytical formulation for the parallel-plate impedance and capacitive elements, whereas the trace-via transitions are described by modal decomposition. It is shown that the models can be applied to efficiently simulate a wide range of structures. Different scenarios are analyzed including thru-hole and buried vias, power vias, and coupled traces routed into different layers. By virtue of the modal decomposition, the proposed method is general enough to handle structures with mixed reference planes. For the first time, these models have been validated against full-wave methods and measurements up to 40 GHz. An improvement on the computation speed of at least two orders of magnitude has been observed with respect to full-wave simulations.

2.5D and 3D technology challenges and test vehicle demonstrations

Three-dimensional (3D) chip integration with through-silicon-vias (TSVs) can enable system benefits of enhanced performance, power efficiency, and cost reduction leveraging micro-architecture designs such as 2.5D silicon packages and 3D die stacks. 2.5D silicon packages and 3D die stacks structures integrated in modules each have unique technical challenges but each can provide system benefits including lower latency and higher bandwidth compared to traditional packaging solutions. Additional system benefits using 2.5D or 3D integration can include product miniaturization or increased function in the same size product. Leveraging proper design and micro-architecture for a system application, 3D technology can aide chip manufacturability for lower costs, sub-component heterogeneous integration, modular design and sub-component design reuse, which can reduce development expense and decrease time to market. 2.5D and 3D technology can reduce interconnection length between circuits leading to lower power consumption and lower latency as well as increase the number of interconnections which supports increased bandwidth to traditional 2D off chip interconnection. Appropriate design ground rules, clocking, and electrical models should match well defined technology attributes such as TSVs and silicon to silicon interconnection electrical parametrics. In addition a wafer test methodology for known good die (KGD) and high yield assembly integration approach are important to obtain integrated 2.5D and 3D modules. For complex 3D integration, proper consideration for module or integrated die stacked with TSVs and Si to Si interconnection may require redundancy and an integral repair methodology. 2.5D and 3D technology challenges may include an increase in the power delivery and cooling requirements to meet the increased circuit density and power density of these structures. For small, low power applications such as mobile devices, 2.5D and 3D technology can provide substantial benefit through both performance benefit and power savings and lead to longer battery life for the same function. For some high performance and high power applications, the 2.5D approach simplifies heterogeneous die integration without requiring leading to increases power density and heat removal cooling density. Whereas some high performance and high power applications using 3D technology may require extensive planning for power delivery with localized power regulation and specialized cooling approaches to avoid excessive in die stack temperatures while taking advantage of performance gains that these short links between heterogeneous die can provide. 3D die stacks using multi-core processors and wide I/O DRAM, eDRAM, SRAM or cache stacks can provide high bandwidth, performance improvements with lower latency. In addition to the power delivery and thermal challenges of 2.5D and 3D described above, there are 3D fabrication and industry compatibility challenges. Technology challenges include wafer integration and finishing with TSVs, test for known-good-die (KGD), assembly and module integration. Infrastructure compatibility and use of newly evolving industry standards such as Semi-3D standards for wafer handling and JEDEC standards for wide I/O memory to name two examples. Standards for wafer shipping are underway and other 3D compatibility standards are being defined over time. This research paper describes key challenges to enable systems using 2.5D and 3D technology. The paper also highlights progress and results for 2.5D and 3D hardware demonstrations and gives an outlook on future demonstrations.

Is 25 Gb/s On-Board Signaling Viable?

What package improvements are required for dense, high-aggregate bandwidth buses running at data rates beyond 10 Gb/s per channel, and when might optical interconnects on the board be required? We present a study of distance and speed limits for electrical on-board module-to-module links with an eye to answering these questions. Hardware-validated models of advanced organic modules and printed circuit boards were used to explore these limits. Simulations of link performance performed with an internal link modeling tool allowed us to explore the effect of equalization and modulation formats at different data rates on link bit error rate and eye opening. Our link models have been validated with active, high-speed differential bus measurements utilizing a 16-channel link chip with programmable equalization and a per-channel data rate of up to 11 Gb/s. Electrical signaling limits were then determined by extrapolating these hardware-correlated models to higher speeds, and these limits were compared to the results of recent work on on-board optical interconnects.

An 8x 10-Gb/s Source-Synchronous I/O System Based on High-Density Silicon Carrier Interconnects

A source synchronous I/O system based on high-density silicon carrier interconnects is introduced. Benefiting from the advantages of advanced silicon packaging technologies, the system uses 50 μm-pitch μC4s to reduce I/O cell size and fine-pitch interconnects on silicon carrier to achieve record-breaking interconnect density. An I/O architecture is introduced with link redundancy such that any link can be taken out of service for periodic recalibration without interrupting data transmission. A timing recovery system using two phase rotators shared across all bits in a receive bus is presented. To demonstrate these concepts, an I/O chipset using this architecture is fabricated in 45 nm SOI CMOS technology. It includes compact DFE-IIR equalization in the receiver, as well as a new all-CMOS phase rotator. The chipset is mounted to a silicon carrier tile via Pb-free SnAg μ C4 solder bumps. Chip-to-chip communication is achieved over ultra-dense interconnects with pitches of between 8 μm and 22 μm. 8 × 10-Gb/s data is received over distances up to 4 cm with a link energy efficiency of 5.3 pJ/bit from 1 V TX and RX power supplies. 8 × 9-Gb/s data is recovered from a 6-cm link with 16.3 dB loss at 4.5 GHz with an efficiency of 6.1 pJ/bit.

Accuracy of Physics-Based Via Models for Simulation of Dense Via Arrays

This paper studies the accuracy of the physics-based via model, specifically when applied to dense via arrays. The physics-based model uses Greens functions for cylindrical waves in radial waveguides to model the via return current paths and the coupling between vias. The effects of approximations made in this model are studied with regard to four types of modes based on an eigenmode expansion for the radial waveguide. It is found that for the mode conversion in the vicinity of the via, an accurate consideration of nonpropagating modes becomes critical with an increasing cavity height. For the interaction between vias in dense arrays, anisotropic modes have an impact for small pitches, whereas the coupling by nonpropagating modes is small for practical printed circuit board dimensions. For a data rate of 20 Gb/s, conclusions with regard to the applicability of the physics-based via model to a multilayer structure are drawn. For 80-mil pitch, a good agreement to full-wave results can be observed. Measurements have been carried out to validate this finding. For 40-mil pitch, the accuracy of the physics-based via model is not sufficient for data rates of 20 Gb/s or higher.

A fully-integrated dual-polarization 16-element W-band phased-array transceiver in SiGe BiCMOS

This paper presents a multi-function, dual-polarization phased array transceiver supporting both radar and communication applications at W-band. 32 receive elements and 16 transmit elements with dual outputs are integrated to support 16 dual polarized antennas in a package. The IC further includes two independent 16:1 combining networks, two receiver downconversion chains, an up-conversion chain, a 40GHz PLL, an 80GHz frequency doubler, extensive digital control circuitry, and on-chip IF/LO combining/distribution circuitry to enable scalability to arrays at the board level. The fully-integrated transceiver is fabricated in the IBM SiGe BiCMOS 0.13um process, occupies an area of 6.6×6.7mm2, and operates from 2.7V (analog/RF) and 1.5V (digital) supplies. Multiple operating modes are supported including the simultaneous reception of two polarizations with a 10GHz IF output, transmission in either polarization from an IF input, or single-polarization transmission/reception from/to I&Q base-band signals (2.5W RX, 2.9W TX). Measurement results show 8dB receiver NF and 2dBm transmitter output power per element at 94GHz in both polarizations.

Modeling of power delivery into 3D chips on silicon interposer

While three-dimensional (3D) technology has several advantages for power delivery, an integrated chip-level, interposer-level, and package-level power distribution network in through-silicon-via (TSV)-based 3D system has to be modeled and evaluated. This paper reports on modeling of power delivery into 3D chip stacks on a silicon interposer/packaging substrate using a novel hybrid approach, i.e., combining the electromagnetic (EM) and analytic simulations. We intentionally partition the real stack-up structure of a 3D power network into separate components, i.e., package vias and traces, C-4 solders, interposer TSVs and planar wires, μ-C4 solders, chip TSVs, and on-chip power grids with node capacitors, decoupling capacitors and active current loads. All the passive RLGCs for each component are extracted using an EM simulation tool at a given working frequency point. We then assemble all the components back into a corresponding equivalent circuit model with those EM extracted RLGC values, thus to analyze the supply voltage (Vdd)variation over time for 3D systems in a manner of maximum accuracy and efficiency.

Efficient full-wave modeling of high density TSVs for 3D integration

This paper presents a full-wave electromagnetic approach for modeling the electrical performance of massively-coupled and coated through silicon vias in a sandwiched SiO2-Si-SiO2 substrate. The planar guided wave is analyzed to determine the fundamental mode and high order modes in stratified media. Cylindrical wave expansions and Foldy-Lax equations for multiple scattering techniques are used to efficiently calculate the couplings among the vias. The effect of SiO2 coating around the via is modeled by general T-matrix coefficients. Both silicon loss and copper loss are included in this approach. Numerical simulations of insertion loss, return loss and crosstalk of 1-by-3 and 4-by-4 through silicon via arrays are presented and compared with general-purpose field-solver.

7.2 A 28GHz 32-element phased-array transceiver IC with concurrent dual polarized beams and 1.4 degree beam-steering resolution for 5G communication

Next-generation mobile technology (5G) aims to provide an improved experience through higher data-rates, lower latency, and improved link robustness. Millimeter-wave phased arrays offer a path to support multiple users at high data-rates using high-bandwidth directional links between the base station and mobile devices. To realize this vision, a phased-array-based pico-cell must support a large number of precisely controlled beams, yet be compact and power efficient. These system goals have significant mm-wave radio interface implications, including scalability of the RFIC+antenna-array solution, increase in the number of concurrent beams by supporting dual polarization, precise beam steering, and high output power without sacrificing TX power efficiency. Packaged Si-based phased arrays [1–3] with nonconcurrent dual-polarized TX and RX operation [2,3], concurrent dual-polarized RX operation [3] and multi-IC scaling [3,4] have been demonstrated. However, support for concurrent dual-polarized operation in both RX and TX remains unaddressed, and high output power comes at the cost of power consumption, cooling complexity and increased size. The RFIC reported here addresses these challenges. It supports concurrent and independent dual-polarized operation in TX and RX modes, and is compatible with a volume-efficient, scaled, antenna-in-package array. A new TX/RX switch at the shared antenna interface enables high output power without sacrificing TX efficiency, and a t-line-based phase shifter achieves <1° RMS error and <5° phase steps for precise beam control.

A compact 4-chip package with 64 embedded dual-polarization antennas for W-band phased-array transceivers

A fully-integrated antenna-in-package (AiP) solution for W-band scalable phased-array systems is demonstrated. We present a fully operational compact W-band transceiver package with 64 dual-polarization antennas embedded in a multilayer organic substrate. This package has 12 metal layers, a size of 16.2 mm × 16.2 mm, and 292 ball-grid-array (BGA) pins with 0.4 mm pitch. Four silicon-germanium (SiGe) transceiver ICs are flip-chip attached to the package. Extensive full-wave electromagnetic simulation and radiation pattern measurements have been performed to optimize the antenna performance in the package environment, with excellent model-to-hardware correlation achieved. Enabled by detailed circuit-package co-design, a half-wavelength spacing, i.e., 1.6 mm at 94 GHz, is maintained between adjacent antenna elements to support array scalability at both the package and board level. Effective isotropic radiated power (EIRP) and radiation patterns are also measured to demonstrate the 64-element spatial power combining.