Christian W. Baks

A 71-Gb/s NRZ Modulated 850-nm VCSEL-Based Optical Link

We report error free (BER <; 10-12) operation of a directly non-return-to-zero modulated 850-nm vertical cavity surface-emitting laser (VCSEL) link operating to 71 Gb/s. This is the highest error free modulation rate for a directly modulated laser of any type. The optical link consists of a 130-nm BiCMOS driver IC with two-tap feed-forward equalization, a wide bandwidth 850-nm VCSEL, a surface illuminated GaAs PIN photodiode, and a 130-nm BiCMOS receiver IC.

160 Gb/s Bidirectional Polymer-Waveguide Board-Level Optical Interconnects Using CMOS-Based Transceivers

We have developed parallel optical interconnect technologies designed to support terabit/s-class chip-to-chip data transfer through polymer waveguides integrated in printed circuit boards (PCBs). The board-level links represent a highly integrated packaging approach based on a novel parallel optical module, or Optomodule, with 16 transmitter and 16 receiver channels. Optomodules with 16 Tx+16 Rx channels have been assembled and fully characterized, with transmitters operating at data rates up to 20 Gb/s for a 27-1 PRBS pattern. Receivers characterized as fiber-coupled 16-channel transmitter-to-receiver links operated error-free up to 15 Gb/s, providing a 240 Gb/s aggregate bidirectional data rate. The low-profile Optomodule is directly surface mounted to a circuit board using convention ball grid array (BGA) solder process. Optical coupling to a dense array of polymer waveguides fabricated on the PCB is facilitated by turning mirrors and lens arrays integrated into the optical PCB. A complete optical link between two Optomodules interconnected through 32 polymer waveguides has been demonstrated with each unidirectional link operating at 10 Gb/s achieving a 160 Gb/s bidirectional data rate. The full module-to-module link provides the fastest, widest, and most integrated multimode optical bus demonstrated to date.

Monolithic Silicon Integration of Scaled Photonic Switch Fabrics, CMOS Logic, and Device Driver Circuits

We demonstrate 4 × 4 and 8 × 8 switch fabrics in multistage topologies based on 2 × 2 Mach-Zehnder interferometer switching elements. These fabrics are integrated onto a single chip with digital CMOS logic, device drivers, thermo-optic phase tuners, and electro-optic phase modulators using IBMs 90 nm silicon integrated nanophotonics technology. We show that the various switch-and-driver systems are capable of delivering nanosecond-scale reconfiguration times, low crosstalk, compact footprints, low power dissipations, and broad spectral bandwidths. Moreover, we validate the dynamic reconfigurability of the switch fabric changing the state of the fabric using time slots with sub-100-ns durations. We further verify the integrity of high-speed data transfers under such dynamic operation. This chip-scale switching system technology may provide a compelling solution to replace some routing functionality currently implemented as bandwidth- and power-limited electronic switch chips in high-performance computing systems.

Chip-to-chip optical interconnects

Terabus is based on a silicon-carrier interposer on an organic card containing 48 polymer waveguides. We have demonstrated 4times12 arrays of low power optical transmitters and receivers, operating up to 20 Gb/s and 14 Gb/s per channel respectively

120-Gb/s VCSEL-based parallel-optical interconnect and custom 120-Gb/s testing station

A 120-Gb/s optical link (12 channels at 10 Gb/s/ch for both a transmitter and a receiver) has been demonstrated. The link operated at a bit-error rate of less than 10/sup -12/ with all channels operating and with a total fiber length of 316 m, which comprises 300 m of next-generation (OM-3) multimode fiber (MMF) plus 16 m of standard-grade MMF. This is the first time that a parallel link with this bandwidth at this per-channel rate has ever been demonstrated. For the transmitter, an SiGe laser driver was combined with a GaAs vertical-cavity surface-emitting laser (VCSEL) array. For the receiver, the signal from a GaAs photodiode array was amplified by a 12-channel SiGe receiver integrated circuit. Key to the demonstration were several custom testing tools, most notably a 12-channel pattern generator. The package is very similar to the commercial parallel modules that are available today, but the per-channel bit rate is three times higher than that for the commercial modules. The new modules demonstrate the possibility of extending the parallel-optical module technology that is available today into a distance-bandwidth product regime that is unattainable for copper cables.

Terabit/s-Class Optical PCB Links Incorporating 360-Gb/s Bidirectional 850 nm Parallel Optical Transceivers

We report here on the design, fabrication, and characterization of highly integrated parallel optical transceivers designed for Tb/s-class module-to-module data transfer through polymer waveguides integrated into optical printed circuit boards (o-PCBs). The parallel optical transceiver is based on a through-silicon-via silicon carrier as the platform for integration of 24-channel vertical cavity surface-emitting laser and photodiode arrays with CMOS ICs. The Si carrier also includes optical vias (holes) for optical access to conventional surface-emitting 850 nm optoelectronic devices. The 48-channel 3-D transceiver optochips are flip-chip soldered to organic carriers to form transceiver optomodules. Fully functional optomodules with 24 transmitter + 24 receiver channels were assembled and characterized with transmitters operating up to 20 Gb/s/ch and receivers up to 15 Gb/s/ch. At 15 Gb/s, the 48-channel optomodules provide a bidirectional aggregate bandwidth of 360 Gb/s. In addition, o-PCBs have been developed using a 48-channel flex waveguide assembly attached to FR4 electronic boards. Incorporation of waveguide turning mirrors and lens arrays facilitates optical coupling to/from the o-PCB. Assembly of optomodules to the o-PCB using a ball grid array process provides both electrical and optical interconnections. An initial demonstration of the full module-to-module optical link achieved >; 20 bidirectional links at 10 Gb/s. At 15 Gb/s, operation at a bit error ratio of <; 10- 12 was demonstrated for 15 channels in each direction, realizing a record o-PCB link with a 225 Gb/s bidirectional aggregate data rate.

Is 25 Gb/s On-Board Signaling Viable?

What package improvements are required for dense, high-aggregate bandwidth buses running at data rates beyond 10 Gb/s per channel, and when might optical interconnects on the board be required? We present a study of distance and speed limits for electrical on-board module-to-module links with an eye to answering these questions. Hardware-validated models of advanced organic modules and printed circuit boards were used to explore these limits. Simulations of link performance performed with an internal link modeling tool allowed us to explore the effect of equalization and modulation formats at different data rates on link bit error rate and eye opening. Our link models have been validated with active, high-speed differential bus measurements utilizing a 16-channel link chip with programmable equalization and a per-channel data rate of up to 11 Gb/s. Electrical signaling limits were then determined by extrapolating these hardware-correlated models to higher speeds, and these limits were compared to the results of recent work on on-board optical interconnects.

Probe based MMW antenna measurement setup

A MMW setup is presented for measuring complex impedance and radiation patterns in an anechoic chamber while contacting the antenna with a coplanar probe. Measurement and simulation results of a 60 GHz Vivaldi antenna are shown to demonstrate the setup performance.

A 24-Channel, 300 Gb/s, 8.2 pJ/bit, Full-Duplex Fiber-Coupled Optical Transceiver Module Based on a Single “Holey” CMOS IC

We report here on the design, fabrication, and high-speed performance of a compact 48-channel optical transceiver module enabled by a key novel component: a “holey” Optochip. A single CMOS transceiver chip with 24 receiver (RX) and 24 laser diode driver circuits, measuring 5.2 mm × 5.8 mm, becomes a holey Optochip with the fabrication of forty-eight through-substrate optical vias (holes): one for each transmitter (TX) and RX channel. Twenty-four channel, 850-nm VCSEL and photodiode arrays are directly flip-chip soldered to the Optochip with their active devices centered on the optical vias such that optical I/O is accessed through the substrate of the CMOS IC. The holey Optochip approach offers numerous advantages: 1) full compatibility with top emitting/detecting 850-nm VCSELs/PDs that are currently produced in high volumes; 2) close integration of the VCSEL/PD devices with their drive electronics for optimized high-speed performance; 3) a small-footprint, chip-scale package that minimizes CMOS die cost while maximizing transceiver packing density; 4) direct coupling to standard 4 × 12 multimode fiber arrays through a 2-lens optical system; and 5) straightforward scaling to larger 2-D arrays of TX and RX channels. Complete transceiver modules, or holey Optomodules, have been produced by flip-chip soldering assembled Optochips to high-density, high-speed organic carriers. A pluggable connector soldered to the bottom of the Optomodule provides all module electrical I/O. The Optomodule footprint, dictated by the 1-mm connector pitch, is 21 mm × 21 mm. Fully functional holey Optomodules with 24 TX and 24 RX channels operate up to 12.5 Gb/s/ch achieving efficiencies (including both TX and RX) of 8.2 pJ/bit. The aggregate 300-Gb/s bi-directional data rate is the highest ever reported for single-chip transceiver modules.

Determination of the complex permittivity of packaging materials at millimeter-wave frequencies

The focus of this paper is the determination of the complex permittivity of chip packaging materials at millimeter-wave frequencies. After a broad overview of existing measurement techniques, three methods will be presented that have been established for the dielectric property determination of substrate, as well as mold materials (encapsulants, under-fill, etc.) in the millimeter-wave frequency range. First, the open resonator used here will be briefly described. It allows accurate determination of the dielectric constant and loss of thin sheet substrate materials from below 20 GHz to above 100 GHz. Second, a filled waveguide method is explained in detail. The setup used here can determine the complex dielectric properties of mold materials from 70 to 100 GHz. Third, the method based on covered transmission lines will be described in detail. The used lines allow measurements from below 40 GHz to approximately 90 GHz. Verification of all three methods will be provided by inter-comparison and comparison to values from the literature. Additionally, results for several typical substrate and mold materials that are available for millimeter-wave packaging will be shown and discussed.