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Featured researches published by Yong-Pil Han.


Journal of The Electrochemical Society | 2002

Effects of nonionic surfactants on oxide-to-polysilicon selectivity during chemical mechanical polishing

Jae-dong Lee; Young-rae Park; Bo Un Yoon; Yong-Pil Han; Sang-rok Hah; Joo-Tae Moon

The effects of surfactants on oxide-to-polysilicon selectivity during chemical mechanical polishing have been investigated. Slurries with nonionic surfactants such as Brij surfactants, polyethylene oxide (PEO), and ethylene oxide-propylene oxide-ethylene oxide triblock copolymer enhanced oxide-to-polysilicon polishing selectivity. Although a current conventional oxide slurry has a low oxide-to-polysilicon selectivity of 0.5:1, slurries with nonionic surfactants show a higher selectivity due to a combined effect of adsorption and interfacial adhesion of added nonionic surfactant molecules on the polysilicon surface. The oxide-to-polysilicon selectivity of the Brij surfactant added slurry displayed a stronger dependency on the hydrophile-lipophile-balance (HLB) value than the type of alkyl group or the chain length of surfactants. Especially, Brij52 with low HLB value gave an oxide-to-polysilicon selectivity of 9.3, which is 17 times higher than the selectivity of a commercial oxide slurry. A high molecular weight polymeric surfactant such as PEO also gave a greater selectivity than a low molecular weight surfactant. In addition, slurries with nonionic surfactants reduce the final thickness variation effectively in damascene structure having a polysilicon stopping layer. The final thickness variation polished with the Brij52 added slurry was decreased to one fourth of that with the conventional oxide slurry only.


Archive | 2002

Method of and system for cleaning a semiconductor wafer simultaneously using electrolytically ionized water and diluted hydrofluoric acid

Hyung-ho Ko; Kun-tack Lee; Im-soo Park; Yong-Pil Han; Song-Rok Ha


Archive | 2003

Chemical mechanical polishing slurry and chemical mechanical polishing method using the same

Jae-dong Lee; Bo-Un Yoon; Yong-Pil Han


Archive | 2005

Single type of semiconductor wafer cleaning apparatus and method of using the same

Kun-tack Lee; Yong-Pil Han; Sang-rok Hah


Archive | 2001

Apparatus for cleaning semiconductor wafer and method for cleaning wafer using the same

Im-soo Park; Kun-tack Lee; Yong-Pil Han; Sang-rok Hah


Archive | 2003

Method of planarizing a surface of a semiconductor device and a semiconductor device manufactured according to the same

Jae-dong Lee; Yong-Pil Han; Chang-ki Hong


Archive | 2001

Single type of semiconductor wafer cleaning device

Kun-tack Lee; Yong-Pil Han; Sang-rok Hah


Archive | 2003

Method of manufacturing storage nodes of a semiconductor memory device using a two-step etching process

Sang-Yong Kim; Kun-tack Lee; Yong-Pil Han


Archive | 2003

Apparatus and methods for cleaning semiconductor wafers using vaporized chemicals

Dong-Gyun Han; Kun-tack Lee; Yong-Pil Han; Hyung-ho Ko


Archive | 2008

Semiconductor device including a planarized surface and method thereof

Jae-dong Lee; Yong-Pil Han; Chang-ki Hong

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