Zachary Baum

Optical rule checking for proximity-corrected mask shapes

Optical Rule Checking (ORC) is an important vehicle to predict the failure of wafer shapes due to the process proximity effects. Optical Proximity Correction (OPC) if not aided by ORC may cause severe failures affecting the yield in manufacturing. However, it is fairly complicated to do ORC on mask shapes that are pre-corrected either by rules-based or by model-based OPC. ORC is also a good tool to capture the problems that may occur at multi-layer interactions. We present a methodology to use both geometric directives and limited optical simulation to detect potential failures using ORC. We extend our methodology to multi-layer interactions. In case of multi-layer ORC, we present several approaches that deal with how to judiciously mix the geometric directives and the optical simulations for different layers. We show the ORC can help us design better rules for OPC.

Double dipole RET investigation for 32 nm metal layers

For 32 nm test chips, aggressive resolution enhancement technology (RET) was required for 1x metal layers to enable printing minimum pitches before availability of the final 32 nm exposure tool. Using a currently installed immersion scanner with 1.2 numerical aperture (NA) for early 32 nm test chips, one of the RET strategies capable of resolving the minimum pitch with acceptable process latitude was dipole illumination. To avoid restricting the use of minimum pitch to a single orientation, we developed a double-expose/single-develop process using horizontal and vertical dipole illumination. To enable this RET, we developed algorithms to decompose general layouts, including random logic, interconnect test patterns, and SRAM designs, into two mask layers: a first exposure (E1) of predominantly vertical features, to be patterned with horizontal dipole illumination; and, a second exposure (E2) of predominantly horizontal features, to be patterned with vertical dipole illumination. We wrote this algorithm into our OPC program, which then applies sub-resolution assist features (SRAFs) separately to the E1 and E2 masks, coordinating the two to avoid problems with overlapping exposures. This was followed by two-mask OPC, using E1 and E2 as mask layers and the original layout (single layer) as the target layer. In this paper, we describe some of the issues with decomposing layout by orientation, issues that arise in SRAF application and OPC, and some approaches we examined to address these issues.

Mastering double exposure process window aware OPC by means of virtual targets

This paper addresses a challenge to the concept of process window OPC (PWOPC) by investigating the dimensional control of effectively non-printing features to improve the process window (PW) of the primary layout. It is shown based on a double exposure (DE) alternating phase-shift mask (altPSM) process that neglecting the impact of final mask dimensions forming intermediate images in resist (which are subsequently removed with a second exposure) potentially leads to a significant variation in the available focus budget of neighboring linewidth-critical feature dimensions. Various rules-based and model-based options of introducing virtual OPC targets into the OPC flow are discussed as an efficient mean to allow the OPC to take process window considerations into account. The paper focuses especially on the mechanics of how in detail those virtual targets support the beneficial OPC convergence of affected edges. Finally, experimental proof is shown that introducing non-printing, virtual targets being considered as actual targets during OPC ensures enhanced through focus line width stability and hence making the OPC solution well aware of process window aspects.

Pre-PDK block-level PPAC assessment of technology options for sub-7nm high-performance logic

This paper describes a rigorous yet flexible standard cell place-and-route flow that is used to quantify block-level power, performance, and area trade-offs driven by two unique cell architectures and their associated design rule differences. The two architectures examined in this paper differ primarily in their use of different power-distribution-networks to achieve the desired circuit performance for high-performance logic designs. The paper shows the importance of incorporating block-level routability experiments in the early phases of design-technology co-optimization by reviewing a series of routing trials that explore different aspects of the technology definition. Since the electrical and physical parameters leading to critical process assumptions and design rules are unique to specific integration schemes and design objectives, it is understood that the goal of this work is not to promote one cell-architecture over another, but rather to convey the importance of exploring critical trade-offs long before the process details of the technology node are finalized to a point where a process design kit can be published.

Application of E-beam hot spot inspection for early detection of systematic patterning problems to a FinFET technology

Abstract. Early in-line detection of systematic patterning problems in technology development can dramatically improve a technology’s chance for success. By uncovering layout geometries that are difficult to implement, prompt action may be taken so that solutions are in place well before product chips that contain these and similar patterns enter the manufacturing line. If a solution is not in place, this could spell disaster for the product and perhaps even the technology. Ideally, product chips will work on the first lot, which is referred to as “first time right.” To help ensure this, a methodology for in-line detection of systematic patterning problems using E-beam hot spot inspection (EBHI) was developed. We review this methodology, including the latest enhancements. Pattern simulation tools and other sources are used to provide die locations with challenging geometries for evaluation. EBHI evaluates the patterning capability for these locations using modulated wafers. A multifunction team addresses any hot spots that fail within the process window. EBHI is then used to evaluate the solutions proposed by this team. Application of this methodology to a fin-shaped field effect transistor technology is described using examples from the fin and back end of line modules. These examples illustrate the full range of actions used to resolve patterning issues.