Alexander A. Pechenkin

Local laser irradiation technique for SEE testing of ICs

The results of local laser simulation for estimation of SEE parameters are presented. Simulation method is based on the local laser irradiation of VLSI by measuring response in power supply circuits and determining laser threshold energy of SEE.

Laser Testing Methodology for Diagnosing Diverse Soft Errors in a Nanoscale SRAM-Based FPGA

In this paper, we propose a method that combines dedicated test designs, readback and bitstream comparisons to investigate soft errors in a nanoscale SRAM-based FPGA under photoelectric stimulation. Static test is performed to analyze the SEU dependency to voltage supply. Static cross-section and threshold energy are presented. Dynamic test is accomplished by using a set of designs in order to diagnose errors from SET in the logic clock tree, SEU in embedded soft-core processor and in the reconfigurable ICAP interface. A picosecond laser is used in the experiments.

Evaluation of sensitivity parameters for single event latchup effect in CMOS LSI ICs by pulsed laser backside irradiation tests

The results of computation-experimental modeling of single-event latchup effects under the laser radiation focused on the IC crystal backside—the substrate side—are presented. Possibilities of applying the technique of local laser irradiation to evaluate equivalent linear energy transfer of heavy ions in the case of the laser irradiation from the substrate side of IC crystal are analyzed. The experimental results obtained using the pulsed laser installation and accelerators of charged particles for a series of modern LSI ICs are compared.

Study of SEL and SEU in SRAM Using Different Laser Techniques

Single event upset (SEU) and single event latchup (SEL) laser testing results of SRAM CY62256 using both focused and local laser irradiation techniques are presented. Variable laser wavelength was used for SEU and SEL threshold linear energy transfer (LET) estimation. The backside laser irradiation technique was also applied. Laser testing results were compared to heavy ion testing ones.

Compendium of SEE comparative results under ion and laser irradiation

Compendium of SEU, SEL, SET, SEB and SEGR comparative results under ion irradiation and focused laser beam are presented. The possible sources of discrepancies between ion and laser results and the ways of data correction are discussed.

Femtosecond Laser Simulation Facility for SEE IC Testing

The new SEE laser simulation facility based on femtosecond laser source with tunable pulse duration is presented, and its most important features are discussed. The influence of laser pulse duration on simulation results is observed.

Laser equipment for hardness evaluation of semiconductor elements exposed to heavy charged particles (Review)

A review of laser devices that are currently used to perform hardness evaluation of microelectronic devices that are exposed to heavy charged particles, with respect to local radiation effects is presented. A brief classification of ionization effects in semiconductors caused by single heavy charged particles is provided. The possibility of using focused pulse-laser radiation for research on these effects is validated. A general approach to the construction of test systems that are based on picosecond lasers with sharp beam focusing systems is presented. The technical requirements for the basic modules of such systems are substantiated. The parameters of the domestic PICO-3 and PICO-4 laser test devices are compared to their foreign analogues and the means of their further improvement are given. The technical and operational characteristics of these devices that allow them to be used in various research tasks that require selective (with a submicron spatial resolution) object excitation by ultrashort laser pulses and recording of its response with exact timing of the moment of excitation, as well as for various precise technological operations, are discussed.

Experimental Investigation of SELs in SiT8003 MEMS-Oscillators

SEEs in SiT8003 MEMS-oscillator were investigated. Irradiation was provided with ion-cyclotron and picosecond focused laser. SEL, SEU were observed. Threshold LET, saturation cross-section were estimated. High SEE sensitivity of SiT8003 is shown.

The Behavior of SEE Sensitivity at Various TID Levels

SEU, SEL and SET sensitivity estimation results using laser technique in dependency of TID effects are presented and discussed.

Method of SEU-Hardness Assurance for SRAM with Error Correction Using Focused Laser Sources

In this work the analysis of possible approaches to SEU-hardness testing for SRAM with error correction were conducted. Efficiency of the aproach proposed by Aeroflex was evaluated, and the results of experimental investigation for 16 Mbit SRAM under heavy ion and focused laser irradaition were provided.