Anthony Mowry

DOPANT PROFILE TUNING FOR MOS DEVICES BY ADAPTING A SPACER WIDTH PRIOR TO IMPLANTATION

Blocking pre-amorphization of a gate electrode of a transistor

IN SITU FORMED DRAIN AND SOURCE REGIONS IN A SILICON/GERMANIUM CONTAINING TRANSISTOR DEVICE

Cold temperature control in a semiconductor device

REDUCTION OF MEMORY INSTABILITY BY LOCAL ADAPTATION OF RE-CRYSTALLIZATION CONDITIONS IN A CACHE AREA OF A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE HAVING A STRAINED SEMICONDUCTOR ALLOY CONCENTRATION PROFILE

Effectiveness of Embedded-SiGe in Strained-SOI Substrates and Implications on Embedded-SiGe Stress Transfer Mechanics

Method for selectively forming strain in a transistor by a stress memorization technique without adding additional lithography steps

METHOD FOR CREATING TENSILE STRAIN BY REPEATEDLY APPLIED STRESS MEMORIZATION TECHNIQUES

INCREASING STRESS TRANSFER EFFICIENCY IN A TRANSISTOR BY REDUCING SPACER WIDTH DURING THE DRAIN/SOURCE IMPLANTATION SEQUENCE