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Ralf Richter

Advanced Micro Devices

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Publication

Featured researches published by Ralf Richter.

Archive | 2007

Method for reducing resist poisoning during patterning of silicon nitride layers in a semiconductor device

Kai Frohberg; Volker Grimm; Sven Mueller; Matthias Lehr; Ralf Richter; Jochen Klais; Martin Mazur; Heike Salz; Joerg Hohage; Matthias Schaller

Archive | 2007

METHOD FOR REDUCING RESIST POISONING DURING PATTERNING OF STRESSED NITROGEN-CONTAINING LAYERS IN A SEMICONDUCTOR DEVICE

Kai Frohberg; Ralf Richter; Thomas Werner

Archive | 2006

Technique for increasing adhesion of metallization layers by providing dummy vias

Ralf Richter; Matthias Schaller; Ellen Claus; Eckhard Langer

Archive | 2008

STRESS TRANSFER IN AN INTERLAYER DIELECTRIC BY PROVIDING A STRESSED DIELECTRIC LAYER ABOVE A STRESS-NEUTRAL DIELECTRIC MATERIAL IN A SEMICONDUCTOR DEVICE

Ralf Richter; Andy Wei; Manfred Horstmann; Joerg Hohage

Archive | 2006

SEMICONDUCTOR DEVICE COMPRISING A CONTACT STRUCTURE WITH INCREASED ETCH SELECTIVITY

Ralf Richter; Carsten Peters; Heike Salz; Matthias Schaller

Archive | 2008

METHOD OF FORMING A SEMICONDUCTOR STRUCTURE COMPRISING A FIELD EFFECT TRANSISTOR HAVING A STRESSED CHANNEL REGION

Ralf Richter; Joerg Hohage; Michael Finken; Jana Schlott

Archive | 2010

Interlayer dielectric material in a semiconductor device comprising stressed layers with an intermediate buffer material

Joerg Hohage; Michael Finken; Ralf Richter

Archive | 2010

TECHNIQUE FOR COMPENSATING FOR A DIFFERENCE IN DEPOSITION BEHAVIOR IN AN INTERLAYER DIELECTRIC MATERIAL

Ralf Richter; Robert Seidel; Carsten Peters

Archive | 2007

ENHANCED STRESS TRANSFER IN AN INTERLAYER DIELECTRIC BY USING AN ADDITIONAL STRESS LAYER ABOVE A DUAL STRESS LINER IN A SEMICONDUCTOR DEVICE

Ralf Richter; Martin Gerhardt; Martin Mazur; Joerg Hohage

Archive | 2006

Lacquer contamination reducing method, involves forming lacquer mask, which unseals area of deformation induced layer, over layer to cover one transistor, and removing unsealed area of layer from area over another transistor

Kai Frohberg; Volker Grimm; Joerg Hohage; Jochen Klais; Matthias Lehr; Martin Mazur; Sven Mueller; Ralf Richter; Heike Salz; Matthias Schaller

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Collaboration

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Joerg Hohage

Advanced Micro Devices

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Carsten Peters

Advanced Micro Devices

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Heike Salz

Advanced Micro Devices

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Robert Seidel

Helmholtz-Zentrum Berlin

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Matthias Schaller

GlobalFoundries

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Kai Frohberg

Advanced Micro Devices

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Michael Finken

Advanced Micro Devices

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Martin Mazur

Advanced Micro Devices

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Frank Feustel

Advanced Micro Devices

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Juergen Boemmels

Advanced Micro Devices

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