Bernhard Löffler
ams AG
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Publication
Featured researches published by Bernhard Löffler.
international reliability physics symposium | 2006
Jochen Kraft; Bernhard Löffler; Nikolaus Ribic; Ewald Wachmann
SiGe-heterojunction bipolar transistors (HBTs) still sustain their leading RF-application position due to their good noise and HF properties. They also offer a relatively high operating voltage, which is limited by BVCEO, the emitter collector breakdown voltage with open base. We show that BVCER, the avalanche breakdown with a resistor RB connected to the base, can be used to define reliable operating conditions exceeding BVCEO. The measured BVCER data correlate very well with values calculated from basic transistor parameters and their corresponding multiplication factor data. The functionality of this concept is verified by investigating a power amplifier circuit used at emitter collector voltages exceeding BV CEO in operational mode enabling significant higher output power
Archive | 2006
Hubert Enichlmair; Jochen Kraft; Bernhard Löffler; Gerald Meinhardt; Georg Röhrer; Ewald Wachmann
Archive | 2004
Hubert Enichlmair; Jochen Kraft; Bernhard Löffler
Archive | 2007
Georg Röhrer; Bernhard Löffler; Jochen Kraft
Archive | 2011
Jochen Kraft; Stefan Jessenig; Günther Koppitsch; Franz Schrank; Jordi Teva; Bernhard Löffler; Jörg Siegert
Archive | 2011
Bernhard Löffler; Franz Schrank; Ewald Stückler
Archive | 2005
Bernhard Löffler; Franz Schrank
Archive | 2011
Bernhard Löffler; Franz Schrank; Ewald Stückler
international reliability physics symposium | 2007
Jochen Kraft; Bernhard Löffler; Martin Knaipp; Ewald Wachmann
Archive | 2006
Jochen Kraft; Bernhard Löffler; Gerald Meinhardt
