Bertil Hansson

60 GHz Single-Chip Front-End MMICs and Systems for Multi-Gb/s Wireless Communication

Single-chip 60 GHz transmitter (TX) and receiver (RX) MMICs have been designed and characterized in a 0.15mum (fT~ 120 GHz/f MAX> 200 GHz) GaAs mHEMT MMIC process. This paper describes the second generation of single-chip TX and RX MMICs together with work on packaging (e.g., flip-chip) and system measurements. Compared to the first generation of the designs in a commercial pHEMT technology, the MMICs presented in this paper show the same high level of integration but occupy smaller chip area and have higher gain and output power at only half the DC power consumption. The system operates with a LO signal in the range of 7-8 GHz. This LO signal is multiplied in an integrated multiply-by-eight (X8) LO multiplier chain, resulting in an IF center frequency of 2.5 GHz. Packaging and interconnects are discussed and as an alternative to wire bonding, flip-chip assembly tests are presented and discussed. System measurements are also described where bit error rate (BER) and eye diagrams are measured when the presented TX and RX MMICs transmits and receives a modulated signal. A data rate of 1.5 Gb/s with simple ASK modulation was achieved, restricted by the measurement setup rather than the TX and RX MMICs. These tests indicate that the presented MMICs are especially well suited for transmission and reception of wireless signals at data rates of several Gb/s

Discharge of MNOS structures at elevated temperatures

Abstract The discharge behavior of MNOS structures without voltage applied, is investigated at temperatures from 25 to 300°C, for times from 10 min to about 1 week. The observed discharge behavior is explained by a theoretical model, including two discharge processes. The two processes are direct tunneling from traps and thermal excitation of these traps. It is shown that static retention times of more than 10 yr at 85°C is attainable. Also, discharge with voltage applied is investigated and shown to agree with the model when the voltage is small enough.

Very low phase-noise fully-integrated coupled VCOs

With the aim of achieving very low phase noise, two area and power consumption efficient methods of coupling two or more identical VCOs are presented. To verify the principles, a set of fully integrated, coupled VCOs of the cross-coupled differential pair type, was manufactured in a commercial SiGe HBT technology. The measured phase noise at 100 kHz offset frequency was -106 dBc/Hz at 6 GHz using two coupled VCOs and -103 dBc/Hz at 12 GHz using four coupled VCOs. A phase noise reduction of 1-6 dB was achieved relative to a single VCO of the same topology. In one of the two methods, output signals are additionally obtained in quadrature.

Influence of bevel angle and surface charge on the breakdown voltage of negatively beveled diffused p-n junctions

An analytical study has been made of the breakdown voltage of negatively beveled∗ high-voltage diffused p-n junctions with substrate doping concentration. NS, in the range of 1013 cm 3-2 × 1014 cm 3. uniform surface charge concentration in the range from NSC = 5 × 1011 cm 2 (negative) to NSC = 1012 cm 2 (positive), diffusion depth xj = 90 μm and negative bevel angle between 0·5 and 6 degrees. A comparison with experimental breakdown data and with i.r.-thermometer measurements support the model for the breakdown process. According to the model avalanche breakdown occurs along a current path passing through a point of maximum electric field which develops below the semiconductor surface on the highly doped side of the junction. The location of the point of maximum field and the value of the field are influenced by the bevel angle and the polarity and concentration of surface charge. The surface charge is shown to have a decisive influence on the breakdown voltage of negatively beveled p-n junctions.

Low phase noise, low power IC VCOs for 5-8 GHz wireless applications

A set of fully integrated VCOs in the 5-8 GHz frequency range has been designed and manufactured in Si/SiGe-HBT technology. A minimum phase noise of -100 dBc/Hz at 100 kHz off-carrier was measured for 2 V supply voltage and 6 mW power consumption.

Affect-Group Intervention for Alexithymia in Eating Disorders

The purpose of this study is to describe a treatment intervention to alleviate eating disturbance and alexithymia symptoms in thirty patients diagnosed with anorexia nervosa and/or bulimia nervosa. The method consists of teaching and coaching about the emotional/affective status of individuals and incorporates both written and oral sessions. The treatment is presented within groups on one occasion (90 min) each week over eight-week periods. The results indicated that the intervention treatment reduced significantly the extent of alexithymia, as measured using the Toronto Alexithymia Scale, expressed by the patients. This implies that the teaching-coaching episodes affected their ability to cope with feelings thereby expressing improved insights concerning self-awareness and an understanding of themselves and others.

Integrated receivers up to 220 GHz utilizing GaAs-mHEMT technology

The status of integrated receivers for remote sensing and communication applications from 60 GHz to higher frequencies is reviewed. Recent receiver results for silicon and III–V technologies are compared with Schottky diode receivers.

Loss considerations for lumped inductors in silicon MMICs

It is shown that in a standard silicon technology the Q-factor of lumped inductors may be increased by design of the cross section of the geometry of the bends and layout. The overall performance depends also on how the terminals of the coils are arranged relative to the ground plane.

New Theoretical Models and Computer Programs for Accurate Design of Microwave Junction Circulators

This paper presents some of the results obtained in a project for optimization and design of microwave junction circulators for stripline and microstrip applications. A new set of expressions for the ferrite permeability parameters has been developed, which is valid and gives accurate results for all magnetizations and internal field intensities. Improved wideband properties of junction circulators are obtained by the use of additional matching elements. Computer programs for accurate design and analysis of circulators with prescribed characteristics have been developed. Comparisons with measurements on experimental models show very good agreement. The program have been used for design of a circulator for operation at two different frequencies.

Flip-chip mounted 1:4 demultiplexer IC in InP DHBT technology operating up to 100 Gb/s

Operation of a packaged 1:4 demultiplexer (DEMUX) in InP DHBT technology for an input data rate of up to 100 Gb/s is presented. The DEMUX IC is flip-chip mounted in a microwave package consisting of an aluminum nitride substrate with coplanar waveguides placed in a Kovar/MoCu housing with coaxial V-connectors. The DEMUX was operated at a supply voltage of -3.5 V and consumes 2.1 W.