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Dive into the research topics where Christof Streck is active.

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Featured researches published by Christof Streck.


international symposium on vlsi technology, systems, and applications | 2007

Implementation of Robust Nickel Alloy Salicide Process for High-Performance 65nm SOI CMOS Manufacturing

Jay W. Strane; David E. Brown; Christian Lavoie; Jun Suenaga; Bala Haran; Patrick Press; Paul R. Besser; Philip L. Flaitz; Michael A. Gribelyuk; Thorsten Kammler; Igor Peidous; Huajie Chen; Stephan Waidmann; Asa Frye; Patrick W. DeHaven; Anthony G. Domenicucci; Conal E. Murray; Randolph F. Knarr; H.J. Engelmann; Christof Streck; Volker Kahlert; Sadanand V. Deshpande; Effendi Leobandung; John G. Pellerin; Jaga Jagannathan

Addition of Pt to Ni silicide produces a robust [NixPt(1-x)]Si, which shows an improved morphological stability, an important reduction in encroachment defect density, a reduced tendency to form NiSi2 and significant variations in monosilicide texture without degrading the device performance or the yield of high-performance 65 nm SOI technologies.


Archive | 2006

Technique for strain engineering in si-based transistors by using embedded semiconductor layers including atoms with high covalent radius

Christof Streck; Volker Kahlert; Alexander Hanke


Archive | 1998

Hot plate cure process for BCB low k interlevel dielectric

Lu You; Dawn M. Hopper; Christof Streck


Archive | 2007

FIELD EFFECT TRANSISTOR HAVING AN INTERLAYER DIELECTRIC MATERIAL HAVING INCREASED INTRINSIC STRESS

Joerg Hohage; Michael Finken; Christof Streck; Ralf Richter


Archive | 2003

Low-k dielectric layer stack including an etch indicator layer for use in the dual damascene technique

Hartmut Ruelke; Christof Streck; Georg Sulzer


Archive | 2006

TECHNIQUE FOR FORMING NICKEL SILICIDE BY DEPOSITING NICKEL FROM A GASEOUS PRECURSOR

Christof Streck; Volker Kahlert; Alexander Hanke


Archive | 1998

Apparatus and methods for uniform scan dispensing of spin-on materials

Lu You; Dawn M. Hopper; Christof Streck; John G. Pellerin; Richard J. Huang


Microelectronic Engineering | 2006

Tuning nickel silicide properties using a lamp based RTA, a heat conduction based RTA or a furnace anneal

Stephan Waidmann; Volker Kahlert; Christof Streck; Patrick Press; Thorsten Kammler; K. Dittmar; Inka Zienert; Jochen Rinderknecht


Archive | 2003

Semiconductor device having a polysilicon line structure with increased metal silicide portions and method for forming the polysilicon line structure of a semiconductor device

Thorsten Kammler; Karsten Wieczorek; Christof Streck


Archive | 2009

Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layer

Christof Streck; Volker Kahlert; Alexander Hanke

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