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Dive into the research topics where Daniel Kadosh is active.

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Featured researches published by Daniel Kadosh.


Multilevel interconnect technology. Conference | 1997

Line Length Dependencies in Interconnect Optimization

Daniel Kadosh; Michael Duane; Yohan Lee

Metal line delay has become increasingly important for ULSI devices. Numerous expressions and software tools have been developed to describe interconnect delay as a function of the geometry and layout. Although many of these formulas have line length effects, this has not been explored in depth. Most software tools are either geared towards circuit designers, or involve more complex and CPU-intensive 3D modeling. In this work, PISCES (a 2D device simulator) was used to extract metal capacitance per unit length. We extend this approach for various lengths by creating a ladder network of the RC components and simulating in SPICE, or using simple closed-form Elmore delay equations. A new key result is that there are optimum metal line width/space for a fixed pitch and height/space ratios that are metal length dependent. For metal lines shorter than about 1500 micrometers , it is better to have narrower metal lines, and for lengths less than 500 micrometers , shrinking metal height is desirable because the penalty in resistance is more than compensated by the decrease in capacitance. For longer lines, the time delay is dominated by resistance, and wider, taller lines are better. Increasing metal spacing or reducing dielectric constant were beneficial for both long and short metal lines.


Archive | 1997

Metal attachment method and structure for attaching substrates at low temperatures

Mark I. Gardner; Fred N. Hause; Daniel Kadosh


Archive | 1997

Composite gate electrode incorporating dopant diffusion-retarding barrier layer adjacent to underlying gate dielectric

Mark I. Gardner; Robert Dawson; H. Jim Fulford; Frederick N. Hause; Daniel Kadosh; Mark W. Michael; Bradley T. Moore; Derick J. Wristers


Archive | 1997

Semiconductor fabrication employing a flowable oxide to enhance planarization in a shallow trench isolation process

Thomas E. Spikes; Fred N. Hause; Daniel Kadosh


Archive | 1998

Nitrogen liner beneath transistor source/drain regions to retard dopant diffusion

Mark I. Gardner; Robert Dawson; H. Jim Fulford; Frederick N. Hause; Daniel Kadosh; Mark W. Michael; Bradley T. Moore; Derick J. Wristers


Archive | 1996

Multi-level transistor fabrication method with a patterned upper transistor substrate and interconnection thereto

Daniel Kadosh; Mark I. Garnder; Jon D. Cheek


Archive | 1997

Method for fabricating differential threshold voltage transistor pair

Frederick N. Hause; Mark I. Gardner; Daniel Kadosh


Archive | 1998

Ultra high density series-connected transistors formed on separate elevational levels

Daniel Kadosh; Mark I. Gardner


Archive | 1998

Ultra high density inverter using a stacked transistor arrangement

Mark I. Gardner; Daniel Kadosh


Archive | 1996

Method of making asymmetrical N-channel and P-channel devices

Daniel Kadosh; Mark I. Gardner

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Jon D. Cheek

Freescale Semiconductor

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David Wu

Advanced Micro Devices

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