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Frederick N. Hause

Advanced Micro Devices

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Publication

Featured researches published by Frederick N. Hause.

Archive | 1999

Low-bandgap source and drain formation for short-channel MOS transistors

Karsten Wieczorek; Manfred Horstmann; Frederick N. Hause

Archive | 1997

Composite gate electrode incorporating dopant diffusion-retarding barrier layer adjacent to underlying gate dielectric

Mark I. Gardner; Robert Dawson; H. Jim Fulford; Frederick N. Hause; Daniel Kadosh; Mark W. Michael; Bradley T. Moore; Derick J. Wristers

Archive | 1997

Method of making NMOS and PMOS devices with reduced masking steps

Frederick N. Hause; Robert Dawson; H. Jim Fulford; Mark I. Gardner; Mark W. Michael; Bradley T. Moore; Derick J. Wristers

Archive | 1997

Method and apparatus for in situ anneal during ion implant

Robert Dawson; H. Jim Fulford; Mark I. Gardner; Frederick N. Hause; Mark W. Michael; Bradley T. Moore; Derick J. Wristers

Archive | 1997

Method of channel doping using diffusion from implanted polysilicon

H. Jim Fulford; Robert Dawson; Mark I. Gardner; Frederick N. Hause; Mark W. Michael; Bradley T. Moore; Derick J. Wristers

Archive | 1997

Transistor with buried insulative layer beneath the channel region

Bradley T. Moore; Robert Dawson; H. Jim Fulford; Mark I. Gardner; Frederick N. Hause; Mark W. Michael; Derick J. Wristers

Archive | 1998

Nitrogen liner beneath transistor source/drain regions to retard dopant diffusion

Mark I. Gardner; Robert Dawson; H. Jim Fulford; Frederick N. Hause; Daniel Kadosh; Mark W. Michael; Bradley T. Moore; Derick J. Wristers

Archive | 1996

Trench transistor with localized source/drain regions implanted through selectively grown oxide layer

Mark I. Gardner; H. Jim Fulford; Frederick N. Hause

Archive | 1997

Method of implanting silicon through a polysilicon gate for punchthrough control of a semiconductor device

Mark I. Gardner; Derick J. Wristers; Robert Dawson; H. Jim Fulford; Frederick N. Hause; Mark W. Michael; Bradley T. Moore

Archive | 1996

Method of forming a shallow junction by diffusion from a silicon-based spacer

Mark I. Gardner; Robert Dawson; H. Jim Fulford; Frederick N. Hause; Mark W. Michael; Bradley T. Moore; Derick J. Wristers

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Mark I. Gardner

Advanced Micro Devices

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Robert Dawson

Advanced Micro Devices

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Derick J. Wristers

Advanced Micro Devices

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H. Jim Fulford

Advanced Micro Devices

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Bradley T. Moore

Advanced Micro Devices

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Mark W. Michael

Advanced Micro Devices

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Charles E. May

Advanced Micro Devices

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Karsten Wieczorek

Advanced Micro Devices

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Daniel Kadosh

Advanced Micro Devices

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Manfred Horstmann

GlobalFoundries

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