Daniel Sobek

Method of programming a non-volatile memory cell using a current limiter

Using hot carrier injection to control over-programming in a non-volatile memory cell having an oxide-nitride-oxide (ONO) structure

Selective erasure of a non-volatile memory cell of a flash memory device

Using negative gate erase voltage to simultaneously erase two bits from a non-volatile memory cell with an oxide-nitride-oxide (ONO) gate structure

Nitride plug to reduce gate edge lifting

Nitridization of the pre-ddi screen oxide

Operational approach for the suppression of bi-directional tunnel oxide stress of a flash cell

Method for inhibiting tunnel oxide growth at the edges of a floating gate during semiconductor device processing

Two bit flash cell with two floating gate regions

Intelligent ramped gate and ramped drain erasure for non-volatile memory cells