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Vei-Han Chan

Advanced Micro Devices

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Publication

Featured researches published by Vei-Han Chan.

symposium on vlsi technology | 1996

New erase scheme suitable for low power flash memory application

Sameer Haddad; Vei-Han Chan; Hao Fang; Yuan Tang; Mark T. Ramsbey; Arthur Wang; Yu Sun; Chi Chang; Jih Lien

A novel erasing method utilizing avalanche hot-electron injection for low power flash memory applications is proposed and investigated. In this new bias scheme, a single internally pumped voltage (<10 V) uniformly charges up an array of cells in 0.5 sec at a current level less than 1 nA per cell. The array exhibited minimal degradation after cycling to beyond 100 K. In addition to providing superior flash reliability, this new bias scheme is suitable for low power application.

Archive | 2000

Circuit implementation to quench bit line leakage current in programming and over-erase correction modes in flash EEPROM

Colin S. Bill; Sameer Haddad; Jonathan Su; Vei-Han Chan

Archive | 1999

Multiple byte channel hot electron programming using ramped gate and source bias voltage

Sameer Haddad; Ravi Sunkavalli; Wing Han Leung; John Chen; Ravi P. Gutala; Colin S. Bill; Vei-Han Chan

Archive | 1998

Non-uniform threshold voltage adjustment in flash eproms through gate work function alteration

Janet Wang; Scott Luning; Vei-Han Chan; Nicholas H. Tripsas

Archive | 1998

Methods for forming nitrogen-rich regions in a floating gate and interpoly dielectric layer in a non-volatile semiconductor memory device

Mark T. Ramsbey; Vei-Han Chan; Sameer Haddad; Chi Chang; Yu Sun; Raymond Yu

Archive | 1997

Memory cell programming with controlled current injection

Vei-Han Chan; Sameer Haddad; Chi Chang

Archive | 1998

Methods and arrangements for introducing nitrogen into a tunnel oxide in a non-volatile semiconductor memory device

Mark T. Ramsbey; Sameer Haddad; Vei-Han Chan; Yu Sun; Chi Chang

Archive | 1998

Method for programming flash electrically erasable programmable read-only memory

Sameer Haddad; Wing Han Leung; John Chen; Ravi Sunkavalli; Ravi P. Gutala; Jonathan Su; Vei-Han Chan; Colin S. Bill

Archive | 1997

Method and system for using a spacer to offset implant damage and reduce lateral diffusion in flash memory devices

Vei-Han Chan; Scott Luning; Mark W. Randolph; Nicholas H. Tripsas; Daniel Sobek; Janet Wang; Timothy Thurgate; Sameer Haddad

Archive | 1999

Non-volatile semiconductor memory device including assymetrically nitrogen doped gate oxide

Mark T. Ramsbey; Sameer Haddad; Vei-Han Chan; Yu Sun; Chi Chang

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Sameer Haddad

Advanced Micro Devices

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Chi Chang

Advanced Micro Devices

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Daniel Sobek

Advanced Micro Devices

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Mark T. Ramsbey

Advanced Micro Devices

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Yu Sun

Advanced Micro Devices

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Colin S. Bill

Advanced Micro Devices

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Scott Luning

Advanced Micro Devices

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Timothy Thurgate

Advanced Micro Devices

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Janet Wang

Advanced Micro Devices

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John Chen

Advanced Micro Devices

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