Edward P. Maciejewski

Recent Progress and Challenges in Enabling Embedded Si:C Technology

Summary In summary, this work demonstrates that integrating ISPD eSi:C stressor in the thick-oxide long-channel nMOS source and drain is feasible. Key challenges lie in both high-quality ISPD eSi:C EPI development and modification of the conventional Si CMOS fabrication process to preserve eSi:C strain. Acknowledgements This work was performed by IBM/AMD/Freescale Alliance Teams at various IBM Research and Development Facilities. We wish to thank Applied Materials and ASM America for supplying high quality eSi:C EPI materials. References: [1] Kah-Wee Ang, King-Jien Chui, Vladimir Bliznetsov, Yihua Wang, Lai-Yin Wong, Chih-Hang Tung, N. Balasubramanian, Ming-Fu Li, Ganesh Samudra, and Yee-Chia Yeo, IEDM Tech. Dig., p503, 2005.[2] Yaocheng Liu, Oleg Gluschenkov, Jinghong Li, Anita Madan, Ahmet Ozcan, Byeong Kim, Tom Dyer, Ashima Chakravarti, Kevin Chan, Christian Lavoie, Irene Popova, Teresa Pinto, Nivo Rovedo, Zhijiong Luo, Rainer Loesing, William Henson, Ken Rim, Symp. on VLSI Tech., p.44, 2007. [3] P. Grudowski, V. Dhandapani, S. Zollner, D. Goedeke, K. Loiko, D. Tekleab, V. Adams, G. Spencer, H. Desjardins, L. Prabhu, R. Garcia, M. Foisy, D. Theodore, M. Bauer, D. Weeks, S. Thomas, A. Thean, B. White, SOI Conf. Proc., p.17, 2007. [4] Zhibin Ren, G. Pei, J. Li, F. Yang, R. Takalkar, K. Chan, G. Xia, Z. Zhu, A. Madan, T. Pinto, T. Adam, J. Miller, A. Dube, L. Black, J. W. Weijtmans, B. Yang, E. Harley, A. Chakravarti, T. Kanarsky, I. Lauer, D.-G. Park, D. Sadana, and G. Shahidi, Symp. on VLSI Tech., P. 172-173, 2008. [5] A. Madan, J. Li, Z. Ren, F. Yang, E. Harley, T. Adam, R. Loesing, Z. Zhu, T. Pinto, A. Chakravarti, A. Dube, R. Takalkar, J. W. Weijtmans, L. Black, D. Schepis, ECS SiGe and Realted Materials and Devices Symposium, Hawaii, Oct. 2008 (to be published).