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Publication
Featured researches published by Edward P. Maciejewski.
Meeting Abstracts | 2008
Bin Yang; Zhibin Ren; R. Takalkar; Linda Black; Abhishek Dube; Johan W. Weijtmans; John Li; Ka Kong Chan; J P de Souza; Anita Madan; Guangrui Xia; Zhengmao Zhu; Johnathan E. Faltermeier; Alexander Reznicek; Thomas N. Adam; Ashima B. Chakravarti; G Pei; Rohit Pal; Eric C. Harley; Brian J. Greene; A. Gehring; M. Cai; Devendra K. Sadana; Dae-Gyu Park; Dan Mocuta; Dominic J. Schepis; Edward P. Maciejewski; Scott Luning; Effendi Leobandung
Summary In summary, this work demonstrates that integrating ISPD eSi:C stressor in the thick-oxide long-channel nMOS source and drain is feasible. Key challenges lie in both high-quality ISPD eSi:C EPI development and modification of the conventional Si CMOS fabrication process to preserve eSi:C strain. Acknowledgements This work was performed by IBM/AMD/Freescale Alliance Teams at various IBM Research and Development Facilities. We wish to thank Applied Materials and ASM America for supplying high quality eSi:C EPI materials. References: [1] Kah-Wee Ang, King-Jien Chui, Vladimir Bliznetsov, Yihua Wang, Lai-Yin Wong, Chih-Hang Tung, N. Balasubramanian, Ming-Fu Li, Ganesh Samudra, and Yee-Chia Yeo, IEDM Tech. Dig., p503, 2005.[2] Yaocheng Liu, Oleg Gluschenkov, Jinghong Li, Anita Madan, Ahmet Ozcan, Byeong Kim, Tom Dyer, Ashima Chakravarti, Kevin Chan, Christian Lavoie, Irene Popova, Teresa Pinto, Nivo Rovedo, Zhijiong Luo, Rainer Loesing, William Henson, Ken Rim, Symp. on VLSI Tech., p.44, 2007. [3] P. Grudowski, V. Dhandapani, S. Zollner, D. Goedeke, K. Loiko, D. Tekleab, V. Adams, G. Spencer, H. Desjardins, L. Prabhu, R. Garcia, M. Foisy, D. Theodore, M. Bauer, D. Weeks, S. Thomas, A. Thean, B. White, SOI Conf. Proc., p.17, 2007. [4] Zhibin Ren, G. Pei, J. Li, F. Yang, R. Takalkar, K. Chan, G. Xia, Z. Zhu, A. Madan, T. Pinto, T. Adam, J. Miller, A. Dube, L. Black, J. W. Weijtmans, B. Yang, E. Harley, A. Chakravarti, T. Kanarsky, I. Lauer, D.-G. Park, D. Sadana, and G. Shahidi, Symp. on VLSI Tech., P. 172-173, 2008. [5] A. Madan, J. Li, Z. Ren, F. Yang, E. Harley, T. Adam, R. Loesing, Z. Zhu, T. Pinto, A. Chakravarti, A. Dube, R. Takalkar, J. W. Weijtmans, L. Black, D. Schepis, ECS SiGe and Realted Materials and Devices Symposium, Hawaii, Oct. 2008 (to be published).
Archive | 2003
Atul C. Ajmera; Andres Bryant; Percy V. Gilbert; Michael A. Gribelyuk; Edward P. Maciejewski; Renee T. Mo; Shreesh Narasimha
Archive | 2004
Chandrasekharan Kothandaraman; Edward P. Maciejewski
Archive | 2001
James W. Adkisson; Edward P. Maciejewski; Peter Smeys; Anthony K. Stamper
Archive | 1998
Andres Bryant; William F. Clark; John J. Ellis-Monaghan; Edward P. Maciejewski; Edward J. Nowak; Wilbur D. Pricer; Minh H. Tong
Archive | 1999
Andres Bryant; William F. Clark; John J. Ellis-Monaghan; Edward P. Maciejewski; Edward J. Nowak; Wilbur D. Pricer; Minh H. Tong
Archive | 2013
Brian J. Greene; Jeffrey B. Johnson; Qingqing Liang; Edward P. Maciejewski
Archive | 2010
Brian J. Greene; Michael P. Chudzik; Shu-Jen Han; William K. Henson; Yue Liang; Edward P. Maciejewski; Myung-Hee Na; Edward J. Nowak; Xiaojun Yu
Archive | 2007
Manjul Bhushan; Mark B. Ketchen; Chandrasekharan Kothandaraman; Edward P. Maciejewski
Archive | 2000
Edward P. Maciejewski; Edward J. Nowak