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Dive into the research topics where Frank Scott Johnson is active.

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Featured researches published by Frank Scott Johnson.


The Japan Society of Applied Physics | 2010

Cost Efficient Novel High Performance Analog Devices Integrated with Advanced HKMG Scheme for 28nm CMOS Technology and Beyond

Jin-Ping Han; Takashi Shimizu; Li-Hong Pan; M. Voelker; Christophe Bernicot; F. Arnaud; Anda C. Mocuta; Knut Stahrenberg; Atsushi Azuma; G. Yang; Manfred Eller; Daniel J. Jaeger; Haoren Zhuang; Katsura Miyashita; Kenneth J. Stein; Deleep R. Nair; J. H. Park; Masafumi Hamaguchi; S. Kohler; Daniel Chanemougame; Weipeng Li; K. Kim; Nam Sung Kim; Christian Wiedholz; S. Miyake; Gen Tsutsui; H. van Meer; J. Liang; Martin Ostermayr; Jenny Lian

Cost Efficient Novel High Performance Analog Devices Integrated with Advanced HKMG Scheme for 28nm CMOS Technology and Beyond J.-P. Han, T. Shimizu, L.-H. Pan, M. Voelker, C. Bernicot, F. Arnaud, A. C. Mocuta, K. Stahrenberg, A. Azuma, G. Yang, M. Eller, D. Jaeger, H. Zhuang, K. Miyashita, K. Stein, D. Nair, J.-H. Park, M. Hamaguchi, S. Kohler, D. Chanemougame, W. Li, K Kim, N. Kim, C. Wiedholz, S. Miyake, G. Tsutsui, H. van Meer, J. Liang, M. Ostermayr, J. Lian, M. Celik, R. Donaton, K. Barla, M.H. Na, Y. Goto, M. Sherony, F. Johnson, R. Wachnik, J. Sudijono,E. Kaste, R. Sampson, J.-H. Ku, A. Steegen, W. Neumueller Infineon Technologies, Renesas, IBM Microelectronics, STMicroelectronics, Toshiba America, GLOBALFOUNDRIES, Samsung Electronics, alliances at IBM SRDC, 2070 Rt 52, Hopewell Junction, NY12533; [email protected],


Archive | 2010

Methods for fabricating finfet structures having different channel lengths

Frank Scott Johnson; Richard T. Schultz


Archive | 2012

Methods for fabricating FinFET integrated circuits on bulk semiconductor substrates

Andy Wei; Francis Tambwe; Frank Scott Johnson


Archive | 2009

METHODS FOR FABRICATING BULK FINFET DEVICES HAVING DEEP TRENCH ISOLATION

Andreas Knorr; Frank Scott Johnson


Archive | 2009

METHODS FOR FABRICATING FINFET SEMICONDUCTOR DEVICES USING L-SHAPED SPACERS

Scott Luning; Frank Scott Johnson


Archive | 2009

SEMICONDUCTOR STRUCTURES AND METHODS FOR FORMING ISOLATION BETWEEN FIN STRUCTURES OF FINFET DEVICES

Andreas Knorr; Frank Scott Johnson


Archive | 2009

Semiconductor device with stressed fin sections, and related fabrication methods

Scott Luning; Frank Scott Johnson


Archive | 2009

FinFET structures with stress-inducing source/drain-forming spacers and methods for fabricating the same

Scott Luning; Frank Scott Johnson; Michael Hargrove


Archive | 2009

Method for forming and integrating metal gate transistors having self-aligned contacts and related structure

Andreas Knorr; Frank Scott Johnson


Archive | 2013

METHODS FOR FORMING SEMICONDUCTOR STRUCTURES USING SELECTIVELY-FORMED SIDEWALL SPACERS

Frank Scott Johnson

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