Gianluca Boselli
Texas Instruments
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Publication
Featured researches published by Gianluca Boselli.
IEEE Transactions on Electron Devices | 2003
Kamel Benaissa; Jau Yuann Yang; Darius L. Crenshaw; Byron Williams; Seetharaman Sridhar; Johnny Ai; Gianluca Boselli; Song Zhao; Shaoping Tang; Stanton P. Ashburn; Praful Madhani; Timothy Blythe; Nandu Mahalingam; H. Shichijo
The use of a high-resistivity substrate extends the capability of standard digital CMOS technology to enable the integration of high-performance RF passive components. The impact of substrate resistivity on the key components of RF CMOS for system-on-chip (SoC) applications is discussed. The comparison includes the transistor, transmission line, inductor, capacitor and varactor, as well as the noise isolation. We also discuss the integration issues including latch-up and well-well isolation in a 0.35-/spl mu/m Cu metal pitch, 0.1-/spl mu/m-gate-length RF CMOS technology.
international reliability physics symposium | 2005
Gianluca Boselli; Vijay Reddy; Charvaka Duvvury
In this study, through a detailed analysis of the last four CMOS technology nodes, targeting similar applications, the intrinsic latch-up process sensitivity is investigated in an attempt to assess in which measure latch-up will continue to be a major reliability concern for future CMOS technologies.
international electron devices meeting | 2002
Jau-Yuann Yang; Kamel Benaissa; Darius L. Crenshaw; Byron Williams; Seetharaman Sridhar; J. Ai; Gianluca Boselli; Song Zhao; Shaoping Tang; Nandu Mahalingam; Stanton P. Ashburn; Praful Madhani; T. Blythe; H. Shichijo
This paper describes the impact of substrate resistivity on the key components of the radio frequency (RF) CMOS for the system on chip (SOC) applications. The comparison includes the transistor, inductor, capacitor, noise isolation, latch-up as well as the well-to-well isolation in a 0.1 /spl mu/m (physical gate length) CMOS technology.
international reliability physics symposium | 2007
Gianluca Boselli; Vesselin Vassilev; Charvaka Duvvury
In this work the high current behavior of drain-extended nMOS transistors (DEnMOS) built in a state-of-the-art 65nm CMOS technology were investigated. It shown that a sufficient level of ESD robustness (I T2~2mA/mum) can be achieved through substrate biasing. The concept will be exploited to build robust ESD protections
international electron devices meeting | 2004
Charvaka Duvvury; Gianluca Boselli
Considerable research during the 80s and 90s laid the foundation for a deeper understanding of the ESD high current device physics and the subsequent protection design techniques required to achieve ESD reliability for numerous applications (Amerasekera and Duvvury, 2001; Dabral and Maloney,1998). Indeed, at every node a different parameter has had the most influencing effect, especially on ESD. This paper will review the recent trends as the industry moves towards nanometer technologies. New circuit applications are also discussed to introduce the upcoming critical issues for ESD and LU design.
electrical overstress electrostatic discharge symposium | 1999
Gianluca Boselli; Stan Meeuwsen; Ton J. Mouthaan; Fred G. Kuper
In this paper we analyzed, through experiments and 2D simulations, the behaviour under high reverse voltages of a DMOS transistor. It turned out that the drift diffusion region (resistor) between the drain contact and p-diffusion region (PI) plays an important role both in the switching-on of the parasitic bipolar structure and in the failure mechanism.
international reliability physics symposium | 2012
Akram A. Salman; Farzan Farbiz; Aravind C. Appaswamy; Hans Kunz; Gianluca Boselli; Mariano Dissegna
This paper demonstrates the dramatic improvement in ESD performance of HV DENMOS and LDMOS obtained by using selective drain extension silicide blocking (SBLK). The results are validated through 3D TCAD and TLP measurements on different technologies. Measured D.C. Id-Vd characteristics show minimal performance impact due to the addition of SBLK region.
international reliability physics symposium | 2013
Farzan Farbiz; Aravind C. Appaswamy; Akram A. Salman; Gianluca Boselli
We report a new challenge to IEC protection of high-speed devices caused by current filamentation due to voltage-overshoot effects in forward-biased diodes. While well understood in reverse-biased junctions, filamentation has never been reported in forward-biased junctions, which are often used in high-speed designs such as USB3 and HDMI. An analytical model is presented to estimate the voltage overshoot as a function of rise-time and bias conditions to predict the trade-offs inherent in low-capacitance ESD diodes.
international electron devices meeting | 2003
Gianluca Boselli; J. Rodriguez; Charvaka Duvvury; Vijay Reddy; P.R. Chidambaram; B. Hornung
A new phenomenon, reported in this paper for the first time, produces a dramatic reduction of the nMOS and pMOS triggering voltage (V/sub Tl/) under ESD conditions for an ultra-scaled 90 nm CMOS technology used in high performance applications. This V/sub Tl/ reduction is caused by the merging of pocket implants in short gate length transistors. This has a serious impact on the ESD sensitivity of output drivers, placing restrictions on the design of effective protection devices and burn-in voltage during product screening.
IEEE Transactions on Device and Materials Reliability | 2014
Vrashank Shukla; Gianluca Boselli; Mariano Dissegna; Charvaka Duvvury; Raj Sankaralingam; Elyse Rosenbaum
This paper presents a computationally efficient methodology to predict the peak current stress experienced by a microelectronic component during a field-induced charge device model (FICDM) electrostatic discharge test. The methodology is applied to a variety of IC components in different types of packages; the peak current values obtained from simulations agree well with those obtained from FICDM measurements.