Giuseppe Curello

Device with stepped source/drain region profile

Isolation body for semiconductor devices and method to form the same

Strained silicon MOS device with box layer between the source and drain regions

Short channel effect of MOS devices by retrograde well engineering using tilted dopant implantation into recessed source/drain regions

High concentration indium fluorine retrograde wells

Enhancing strained device performance by use of multi narrow section layout

Penetrating implant for forming a semiconductor device

Selective spacer formation on transistors of different classes on the same device

Active region spacer for semiconductor devices and method to form the same

Method of fabricating a MOSFET transistor having an anti-halo for modifying narrow width device performance