Ian R. Post

A 1.1 GHz 12

A low-power, high-speed SRAM macro is designed in a 65 nm ultra-low-power (ULP) logic technology for mobile applications. The 65 nm strained silicon technology improves transistor performance/leakage tradeoff, which is essential to achieve fast SRAM access speed at substantially low operating voltage and standby leakage. The 1 Mb SRAM macro features a 0.667 mum2 low-leakage memory cell and can operate over a wide range of supply voltages from 1.2 V to 0.5 V. It achieves operating frequency of 1.1 GHz and 250 MHz at 1.2 V and 0.7 V, respectively. The SRAM leakage is reduced to 12 muA/Mb at the data retention voltage of 0.5 V. The measured bitcell leakage from the SRAM array is ~2 pA/bit at retention voltage with integrated leakage reduction schemes.

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A low-power high-speed SRAM macro is implemented in an ultra-low-power 8M 65nm CMOS for mobile applications. The 1Mb macro features a 0.667μm2 low-leakage memory cell and operates with supply voltage from 0.5V to 1.2V. It operates at a frequency of 1.1 GHz at 1.2V and 250MHz at 0.7V. Leakage is reduced to 12μA/Mb at the data retention voltage of 0.5V. The measured bitcell leakage from the SRAM array is ~2pA/b at retention voltage with integrated leakage reduction schemes.