Gyuhwan Oh
Samsung
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Publication
Featured researches published by Gyuhwan Oh.
symposium on vlsi technology | 2010
Ik-Soo Kim; Sung-Lae Cho; Dong-Hyun Im; Eun-ju Cho; D. H. Kim; Gyuhwan Oh; Dong-ho Ahn; Su-Jin Park; Seo-Woo Nam; June Moon; Chilhee Chung
A PRAM cell with great scalability and high speed operation capability with excellent reliability below 20nm technology was demonstrated. This has the meaning of the potential applicable to the technology area of scaling limitation of DRAM cell. We fabricated a confined PRAM cell with 7.5nm×17nm of below 4F2. In particular, Sb-rich Ge-Sb-Te phase change material was employed for high speed operation below 30nsec. The excellent writing endurance performance was predicted to maintain up to 6.5E15cycles by reset program energy acceleration. Its data retention was 4.5 years at 85°C which is enough for DRAM application.
symposium on vlsi technology | 2006
Hong Sik Yoon; In-Gyu Baek; Jin-Shi Zhao; Hyun-Jun Sim; Min Young Park; Hansin Lee; Gyuhwan Oh; Jong Chan Shin; In-Seok Yeo; U-In Chung
symposium on vlsi technology | 2006
Gyuhwan Oh; Yoon-Moon Park; Juyul Lee; Dong-Hyun Im; J.S. Bae; D. H. Kim; D.H. Ahn; Hideki Horii; Su-Jin Park; Hyunki Yoon; In-sung Park; Y.S. Ko; U-In Chung; June Moon
Archive | 2007
Shin-Jae Kang; Gyuhwan Oh; In-sun Park; Hyun-Seok Lim; Nak-Hyun Lim
Archive | 2010
Young-Lim Park; Jin-Il Lee; Dong-ho Ahn; Sihyung Lee; Gyuhwan Oh
Archive | 2012
Gyuhwan Oh; Dong-Hyun Im; Soonoh Park; Dong-ho Ahn; Young-Lim Park; Eun-Hee Cho
Archive | 2014
Eun-Ok Lee; Nam-Gun Kim; Gyuhwan Oh; Hee-sook Park; Hyun-Jung Lee; Kyungho Jang
Archive | 2014
Gyuhwan Oh
Archive | 2008
圭煥 ▲呉▼; Shin-Jae Kang; Hyun-Seok Lim; Nak-Hyun Lim; Gyuhwan Oh; In-sun Park; 信在 姜; 仁善 朴; ▲ヒュン▼錫 林; 洛鉉 林
Archive | 2010
Gyuhwan Oh; Young-Lim Park; Soonoh Park; Dong-ho Ahn; Jin-Il Lee