Young-Lim Park

Methods of forming phase change memory devices having bottom electrodes

Method of forming a phase changeable material layer, a method of manufacturing a phase changeable memory unit, and a method of manufacturing a phase changeable semiconductor memory device

Method of forming variable resistance memory device

Variable Resistance Memory Device and Methods of Forming the Same

Metal precursors for low temperature deposition and methods of forming a metal thin layer and manufacturing a phase-change memory device using the metal precursors

Method of forming a phase change material layer, method of forming a phase change memory device using the same, and a phase change memory device so formed

METHOD OF FORMING A PHASE-CHANGEABLE LAYER AND METHOD OF MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE USING THE SAME

Phase-change material layers, methods of forming the same, phase-change memory devices having the same, and methods of forming phase-change memory devices

METHODS OF FORMING A SEMICONDUCTOR DEVICE INCLUDING A PHASE CHANGE MATERIAL LAYER

PHASE CHANGE MEMORY DEVICE INCLUDING RESISTANT MATERIAL AND METHOD OF FABRICATING THE SAME