Hideto Hidaka

An SOI-DRAM with wide operating voltage range by CMOS/SIMOX technology

For future ULSI DRAMs beyond the 256 Mb generation, several circuit techniques and memory cell structures have been proposed to meet the requirement of high performance at low voltage. These solutions frequently involve complicated processing steps and/or the ultimate limitations of current Si-MOS devices. DRAM on silicon on insulator (SOI) substrate is a more simple solution to the problem. Thin-film SOI structures with isolation by implanted oxygen (SIMOX) process are under investigation for SRAM and logic. A SOI-DRAM test device with 100 nm thick SOI film has been fabricated in 0.5 /spl mu/m CMOS/SIMOX technology. With this 64 kb SOI-DRAM the bit-line to memory cell capacitance ratio Cb/Cs is reduced by 25% compared with the reference bulk-Si DRAM, because of the decreased junction capacitance. RAS access time tRAC is 70 ns at 2.7 VVcc, as fast as the equivalent bulk-Si device at 4 VVcc. The clock timing in this DRAM is not optimized, so access time should improve with well-tuned clocks. The boosted-level generator with body-contact structure enhances the upper Vcc margin and the reduced body-effect of sense-amplifier transistors improves the lower Vcc margin. The SOI-DRAM has an operating Vcc range from 2.3 V to 4.0 V. >

Twisted bit-line architectures for multi-megabit DRAMs

As the memory cell array of DRAM has been scaled down, inter-bit-line coupling noise has emerged as a serious problem. The signal loss due to this noise is estimated at about 40% of the signal amplitude in a polycide-bit-line 16-Mb DRAM with a technologically attainable scaling scheme. Twisted bit-line architectures to reduce or eliminate the noise are proposed and demonstrated by the soft-error rate improvement of a 1-Mb DRAM. The effective critical charge is improved by 35%, which is attributed not only to the improvement of the signal amplitude but also to the elimination of large coupling noise during the sensing operation. The impact of these twisted bit-line architectures from a scaling viewpoint is also examined, and they are shown to be promising candidates for overcoming the scaling problems of DRAMs. >

The cache DRAM architecture: a DRAM with an on-chip cache memory

A DRAM (dynamic RAM) with an on-chip cache, called the cache DRAM, has been proposed and fabricated. It is a hierarchical RAM containing a 1-Mb DRAM for the main memory and an 8-kb SRAM (static RAM) for cache memory. It uses a 1.2- mu m CMOS technology. Suitable for no-wait-state memory access in low-end workstations and personal computers, the chip also serves high-end systems as a secondary cache scheme. It is shown how the cache DRAM bridges the gap in speed between high-performance microprocessor units and existing DRAMs. The cache DRAM concept is explained, and its architecture is presented. The error checking and correction scheme used to improve the cache DRAMs reliability is described. Performance results for an experimental device are reported.<<ETX>>

An experimental 256-Mb DRAM with boosted sense-ground scheme

In developing the 256-Mb DRAM, the data retention characteristics must inevitably be improved. In order for DRAMs to remain the semiconductor device with the largest production volume in the 256-Mb era, we must develop a cost effective device with a small chip size and a large process tolerance. In this paper, we propose the BSG (boosted sense-ground) scheme for data retention and FOGOS (folded global and open segment bit-line) structure for chip size reduction. We have fabricated an experimental 256-Mb DRAM with these technologies and obtained a chip size of 304 mm/sup 2/ and a performance of 34 ns access time. >

A 34-ns 16-Mb DRAM with controllable voltage down-converter

A high-speed 16-Mb DRAM with high reliability is reported. A multidivided column address decoding scheme and a fully embedded sense-amplifier driving scheme were used to meet the requirements for high speed. A low-power hybrid internal power supply voltage converter with an accelerated life-test function is also proposed and was demonstrated. A novel substrate engineering technology, a retrograded well structure formed by a megaelectronvolt ion-implantation process, provides a simple process sequence and high reliability in terms of soft error and latch-up immunity. >

A redundancy test-time reduction technique in 1-Mbit DRAM with a multibit test mode

To realize an efficient redundancy test using the multibit test (MBT) mode, a redundancy flag on a memory LSI tester and an effective redundancy technique which cooperates with the MBT mode have been introduced. This simple redundancy architecture needs only the RFLG (512 bits for the 1 M*1-bit DRAM) as a hardware option on a memory LSI tester. The program development time for the redundancy test has been shortened. Throughput improvement of six to ten times has been achieved in the actual 1-Mb DRAM redundancy test. >

ULSI DRAM/SIMOX with stacked capacitor cells for low-voltage operation

An SOI-DRAM test device was fabricated on thin-film SOI (Silicon On Insulator) structure with 0.5 /spl mu/m CMOS/SIMOX (Separation by IMplanted OXygen) technology. Field-shield isolation and polysilicon pad techniques were introduced for the specific problems to thin-film SOI devices such as the floating body effects and increase of parasitic source/drain resistance, respectively. Keeping the thin-film SOI from etching off during DRAM cell processing was especially cared by using high-selectivity ECR etching technology. The bit-line capacitance of the experimental SOI-DRAM is reduced by 25% and the /RAS access time is 30% faster compared with the equivalent Bulk-Si DRAM. Low voltage DRAM operation down to 2 V range is also observed.<<ETX>>

A 1.2V 1Mbit embedded MRAM core with folded bit-line array architecture

A 1Mbit MRAM with a 0.81 /spl mu/m/sup 2/ 1-Transistor 1-Magnetic Tunnel Junction (1Tr-1MTJ) cell using 0.13 /spl mu/m 4LM logic technology has been produced. A folded-bitline sensing and common write word-line scheme with dummy row architecture achieves 100MHz random read cycle with n/sup +/ diffusion/Co-silicide read source lines. Employing a distributed gate voltage control scheme, high speed write current switching without write disturb by peak current even at 1.2V power supply is demonstrated.

Cell-plate line connecting complementary bit-line (C/sup 3/) architecture for battery-operated DRAMs

In low-voltage operating DRAMs, one of the most serious problems is how to maintain sufficient charge stored in the memory cell, which is concerned with the operating margin and soft error immunity. An array architecture called the cell-plate line connecting complementary bit-line (C/sup 3/) architecture, which realizes a large signal voltage on the bit-line pair and low soft error rate (SER) without degrading the reliability of the memory cell capacitor dielectric film, is proposed. This architecture requires no unique process technology and no additional chip area. With the test device using the 16-Mb DRAM process, a 130-mV signal voltage is observed at 1.5-V power supply with 1.6- mu m*3.2- mu m cell size. This architecture should open the path for the future battery-backup and/or battery-operated high-density DRAMs. >

A circuit design of intelligent cache DRAM with automatic write-back capability

An intelligent cache based on a distributed architecture that consists of a hierarchy of three memory sections-DRAM (dynamic RAM), SRAM (static RAM), and CAM (content addressable memory) as an on-chip tag-is reported. The test device of the memory core is fabricated in a 0.6 mu m double-metal CMOS standard DRAM process, and the CAM matrix and control logic are embedded in the array. The array architecture can be applied to 16-Mb DRAM with less than 12% of the chip overhead. In addition to the tag, the array embedded CAM matrix supports a write-back function that provides a short read/write cycle time. The cache DRAM also has pin compatibility with address nonmultiplexed memories. By achieving a reasonable hit ratio (90%), this cache DRAM provides a high-performance intelligent main memory with a 12 ns(hit)/34 ns(average) cycle time and 55 mA (at 25 MHz) operating current. >