Hideshi Miyatake
Mitsubishi Electric
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Publication
Featured researches published by Hideshi Miyatake.
IEEE Journal of Solid-state Circuits | 1985
Masaki Kumanoya; Kazuyasu Fujishima; Hideshi Miyatake; Yasumasa Nishimura; Kazunori Saito; Takayuki Matsukawa; Tsutomu Yoshihara; Takao Nakano
A single 50V supply 1-Mb DRAM using a half V/SUB cc/ biased memory cell with a reduced electric field of 2 MV/cm and a shared sensing scheme for reasonable cell signal is described. A testability concept which allows 1/4 reduced test time, page/nibble functions including a continuous nibble mode, and an effective redundancy circuit are also described. A typical access time of 90 ns has been obtained using a titanium polycide world-line technology.
Archive | 1986
Hideto Hidaka; Kazuyasu Fujishima; Masaki Kumanoya; Hideshi Miyatake; Katsumi Dosaka; Yasuhiro Konishi
Electronics and Communications in Japan Part Ii-electronics | 1989
Masaki Kumanoya; Katsumi Dosaka; Yashuhiro Konishi; Tsutomu Yoshihara; Hideshi Miyatake; Yuto Ikeda; Isao Furuta
Electronics and Communications in Japan Part Ii-electronics | 1988
Hideto Hidaka; Kazuyasu Fujishima; Masaki Kumanoya; Hideshi Miyatake; Katsumi Dosaka; Yasumasa Nishimura; Tsutomu Yoshihara
Archive | 1988
Hideshi Miyatake; Masaki Kumanoya; Hideto Hidaka; Hiroyuki Yamasaki; Yasuhiro Konishi; Yuto Ikeda
Archive | 1986
Kazuyasu Fujishimaa; Masaki Kumanoya; Hideshi Miyatake; Hideto Hidaka; Katsumi Dosaka; Tsutomu Yoshihara
Archive | 1986
Hideto Hidaka; Kazuyasu Fujishima; Masaki Kumanoya; Hideshi Miyatake; Katsumi Dosaka; Tsutomu Yoshihara
Archive | 1985
Hideshi Miyatake; Kazuyasu Fujishima; Kazuhiro Shimotori
Archive | 1985
Hideshi Miyatake; Kazuyasu Fujishima; Tsutomu Yoshihara; Masaki Kumanoya; Hideto Hidaka; Katsumi Dosaka
Archive | 1985
Kazuyasu Fujishima; Masaki Kumanoya; Hideshi Miyatake; Hideto Hidaka; Katsumi Dosaka; Tsutomu Yoshihara
