In-Sang Jeon

Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor

Semiconductor devices having metal layers as barrier layers on upper or lower electrodes of capacitors

Method of manufacturing a barrier metal layer using atomic layer deposition

Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same

Method for forming metal layer of semiconductor device using metal halide gas

Methods of Manufacturing Semiconductor Devices Having Low Resistance Buried Gate Structures

Gate electrode, method of forming the same, transistor having the gate electrode, method of manufacturing the same, semiconductor device having the gate electrode and method of manufacturing the same

Semiconductor device having recess channel structure

MOS semiconductor devices having polysilicon gate electrodes and high dielectric constant gate dielectric layers and methods of manufacturing such devices

Semiconductor Devices Having Transistors with Different Gate Structures and Related Methods