Kousuke Yoshihara
Tokyo Electron
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Publication
Featured researches published by Kousuke Yoshihara.
Proceedings of SPIE | 2009
Hiroshi Arima; Yuichi Yoshida; Kousuke Yoshihara; Tsuyoshi Shibata; Yuki Kushida; Hiroki Nakagawa; Yukio Nishimura; Yoshikazu Yamaguchi
Residue type defect is one of yield detractors in lithography process. It is known that occurrence of the residue type defect is dependent on resist development process and the defect is reduced by optimized rinsing condition. However, the defect formation is affected by resist materials and substrate conditions. Therefore, it is necessary to optimize the development process condition by each mask level. Those optimization steps require a large amount of time and effort. The formation mechanism is investigated from viewpoint of both material and process. The defect formation is affected by resist material types, substrate condition and development process condition (D.I.W. rinse step). Optimized resist formulation and new rinse technology significantly reduce the residue type defect.
Archive | 2005
Junji Nakamura; Kousuke Yoshihara; Kentaro Yamamura; Fumiko Iwao; Hirofumi Takeguchi
Archive | 2011
Taro Yamamoto; Kousuke Yoshihara; Hideharu Kyouda; Hirofumi Takeguchi; Atsushi Ookouchi
Archive | 2003
Takashi Takekuma; Toshinobu Furusho; Takeshi Ohto; Hiroyuki Miyamoto; Kousuke Yoshihara; Shinya Hori; Hiroyuki Hara
Archive | 2004
Atsushi Ookouchi; Taro Yamamoto; Hirofumi Takeguchi; Hideharu Kyouda; Kousuke Yoshihara
Archive | 2005
Taro Yamamoto; Atsushi Ookouchi; Hirofumi Takeguchi; Kousuke Yoshihara
Archive | 2006
Kousuke Yoshihara; Tomohiro Iseki
Archive | 2008
Kousuke Yoshihara; Tomohiro Iseki; Koji Takayanagi
Archive | 2011
Kousuke Yoshihara; Tomohiro Iseki
Archive | 2002
Taro Yamamoto; Akihiro Fujimoto; Kousuke Yoshihara; Hideharu Kyouda; Hirofumi Takeguchi