Michael L. Gautsch

A Thin-Film SOI 180nm CMOS RF Switch Technology

This paper describes a 180nm CMOS thin film SOI technology developed for RF switch applications. For the first time we show that the well-known harmonic generation issue in HRES SOI technologies can be suppressed with one additional mask. Power handling, linearity, and Ron*Coff product are competitive with GaAs pHEMT and silicon-on-sapphire technologies. Index Terms — RF switch, thin film SOI, wireless, CMOS

High performance, low complexity 0.18 /spl mu/m SiGe BiCMOS technology for wireless circuit applications

High frequency performance at low current density and low wafer cost is essential for low power wireless BiCMOS technologies. We have developed a low-complexity, ASIC-compatible, 0.18 /spl mu/m SiGe BiCMOS technology for wireless applications that offers 3 different breakdown voltage NPNs; with the high performance device achieving F/sub t//F/sub max/ of 60/85 GHz with a 3.0 V BV/sub CEO/. In addition, a full suite of high performance passive devices complement the state-of-the-art SiGe wireless HBTs.

A low complexity 0.13 /spl mu/ SiGe BiCMOS technology for wireless and mixed signal applications

We present IBMs next-generation, cost-performance-optimized BiCMOS technology (BiCMOS 8WL) which combines a state-of-the-art suite of SiGe NPNs, foundry compatible 0.13 μm CMOS, and a rich set of modular passive devices. Intended for a wide variety of supply voltages, the technology, features three different performance NPNs and standard, dual oxide, zero V t , and junction isolated FETs. Optimized for wireless and mixed signal applications, BiCMOS 8WL will enable system on a chip integration for 3G cellular applications.

Collector optimization in advanced SiGe HBT technologies

With the advancement of the fT/fMAX performance scaling of SiGe HBTs the breakdown voltage (BVCBO/BVCEO) reduces commensurately, causing design related concerns. It is important, therefore, that multiple fT/BVCEO devices be offered in the RF technologies to meet the varying needs of the communication products. Unlike the GaAs technologies, the SiGe BiCMOS technologies are capable of integrating various flavors of fT/BVCEO SiGe HBT devices at a technology node. In this work, we investigate the tradeoff in fT-BVCEO for advanced SiGe HBTs by various collector optimization schemes such as, subcollector dopant species and concentration, epilayer thickness, SIC and other layout techniques.

A 0.24 μm SiGe BiCMOS technology featuring 6.5V CMOS, f T /f MAX of 15/14 GHz VPNP, and f T /f MAX of 60/125 GHz HBT

For the first time, we report a 0.24 mum SiGe BiCMOS technology that offers full suite of active device including three distinct NPNs, a vertical PNP, CMOS supporting three different operating-voltages, and wide range of passive devices. In particular, this technology provides 6.5 V CMOS capability and VPNP with fT/fMAX of 15/14 GHz and BVCEO of 6.5 V which can be used to complement high breakdown NPN with fT of 30 GHz and BVceo of 6.0 V.