Is this you? Create Your Porfile
Avatar

Peter Huebler

Advanced Micro Devices

Network

Latest external collaboration on country level. Dive into details by clicking on the dots.

Explore More

Hotspot

Dive into the research topics where Peter Huebler is active.

Explore More

Publication

Featured researches published by Peter Huebler.

Archive | 2005

Method of patterning a low-k dielectric using a hard mask

Matthias Lehr; Peter Huebler; Christian Zistl

Archive | 2005

Technique for forming copper-containing lines embedded in a low-k dielectric by providing a stiffening layer

Peter Huebler; Frank Koschinsky; Frank Feustel

Archive | 2005

Method for cleaning the surface of a substrate

Frank Koschinsky; Volker Kahlert; Peter Huebler

Archive | 2001

Void formation monitoring method for damascene structures, involves forming and cutting test structures then inspecting cross-sectional view and investigating void formation in damascene structure

Thomas Werner; Peter Huebler; Frank Koschinsky

Archive | 2006

Method of forming electrically conductive lines in an integrated circuit

Frank Feustel; Frank Koschinsky; Peter Huebler

Archive | 2005

Halbleiterbauelement mit einem Hybrid-Metallisierungsschichtstapel für eine verbesserte mechanische Festigkeit während und nach dem Einbringen in ein Gehäuse

James Werking; Frank Feustel; Christian Zistl; Peter Huebler

Archive | 2006

Verfahren zum Ausbilden elektrisch leitfähiger Leitungen in einem integrierten Schaltkreis

Frank Feustel; Frank Koschinsky; Peter Huebler

Archive | 2005

Low-k dielectric layer patterning method for integrated circuits, involves forming patterned hard mask above low-k dielectric layer of semiconductor metallization layer

Peter Huebler; Matthias Lehr; Christian Zistl

Archive | 2009

Ätzstoppschicht mit geringerer Dicke zum Strukturieren eines dielektrischen Materials in einer Kontaktebene dichtliegender Transistoren

Karsten Wieczorek; Manfred Horstmann; Peter Huebler; Kerstin Ruttloff

Archive | 2008

Ätzstoppschicht mit geringerer Dicke zum Strukturieren eines dielektrischen Materials in einer Kontaktebene dichtliegender Transistoren Etch stop layer with reduced thickness for patterning a dielectric material in a contact plane lying close transistors

Manfred Horstmann; Peter Huebler; Kerstin Ruttloff; Karsten Wieczorek

Explore More

Collaboration

Dive into the Peter Huebler's collaboration.

Top Co-Authors
Avatar

Christian Zistl

Advanced Micro Devices

View shared research outputs
Top Co-Authors
Avatar

Frank Feustel

Advanced Micro Devices

View shared research outputs
Top Co-Authors
Avatar

Frank Koschinsky

Advanced Micro Devices

View shared research outputs
Top Co-Authors
Avatar

Matthias Lehr

Advanced Micro Devices

View shared research outputs
Top Co-Authors
Avatar

Karsten Wieczorek

Advanced Micro Devices

View shared research outputs
Top Co-Authors
Avatar

Volker Kahlert

Advanced Micro Devices

View shared research outputs
Top Co-Authors
Avatar

Kerstin Ruttloff

Advanced Micro Devices

View shared research outputs
Top Co-Authors
Avatar

Frank Koschinsky

Advanced Micro Devices

View shared research outputs
Top Co-Authors
Avatar

Manfred Horstmann

GlobalFoundries

View shared research outputs
Top Co-Authors
Avatar

James Werking

Advanced Micro Devices

View shared research outputs
Explore More
Researchain Logo
Decentralizing Knowledge