Ryan W. Wuthrich | Researchain

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Featured researches published by Ryan W. Wuthrich.

bipolar/bicmos circuits and technology meeting | 2002

High performance, low complexity 0.18 /spl mu/m SiGe BiCMOS technology for wireless circuit applications

Natalie B. Feilchenfeld; Louis D. Lanzerotti; David C. Sheridan; Ryan W. Wuthrich; Peter J. Geiss; D. Coolbaugh; Peter B. Gray; J. He; P. Demag; J. Greco; T. Larsen; V. Patel; Michael J. Zierak; Wade J. Hodge; Jay Rascoe; J. Trappasso; Bradley A. Orner; A. Norris; Douglas B. Hershberger; B. Voegeli; Steven H. Voldman; Robert M. Rassel; V. Ramachandrian; Michael L. Gautsch; Ebenezer E. Eshun; R. Hussain; D. Jordan; S. St Onge; James S. Dunn

High frequency performance at low current density and low wafer cost is essential for low power wireless BiCMOS technologies. We have developed a low-complexity, ASIC-compatible, 0.18 /spl mu/m SiGe BiCMOS technology for wireless applications that offers 3 different breakdown voltage NPNs; with the high performance device achieving F/sub t//F/sub max/ of 60/85 GHz with a 3.0 V BV/sub CEO/. In addition, a full suite of high performance passive devices complement the state-of-the-art SiGe wireless HBTs.

Archive | 2002

Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling

Wesley C. Natzle; David C. Ahlgren; Steven G. Barbee; Marc W. Cantell; Basanth Jagannathan; Louis D. Lanzerotti; Seshadri Subbanna; Ryan W. Wuthrich

Archive | 2004

Diffused extrinsic base and method for fabrication

Marc W. Cantell; James S. Dunn; David L. Harame; Robb Allen Johnson; Louis D. Lanzerotti; Stephen A. St. Onge; Brian L. Tessier; Ryan W. Wuthrich

Archive | 2002

Method of manufacture of MOSFET device with in-situ doped, raised source and drain structures

Wesley C. Natzle; Marc W. Cantell; Louis D. Lanzerotti; Effendi Leobandung; Brian L. Tessier; Ryan W. Wuthrich

Archive | 2001

Method to increase carbon and boron doping concentrations in Si and SiGe films

Basanth Jagannathan; Jack O. Chu; Ryan W. Wuthrich; Byeongju Park

Archive | 2004

INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYER TO ENHANCE YIELD FOR Si-Ge BIPOLAR TECHNOLOGY

Jack O. Chu; Douglass Duane Coolbaugh; James S. Dunn; David R. Greenberg; David L. Harame; Basanth Jagannathan; Robb Allen Johnson; Louis D. Lanzerotti; Kathryn T. Schonenberg; Ryan W. Wuthrich

Archive | 2004