Shahriar Ahmed
Intel
Network
Latest external collaboration on country level. Dive into details by clicking on the dots.
Publication
Featured researches published by Shahriar Ahmed.
international symposium on plasma process-induced damage | 1997
Mohsen Alavi; Steve Jacobs; Shahriar Ahmed; Chan-Hong Chern; Paul McGregor
Plasma induced gate charging damage is evaluated for advanced processes with ultra thin oxides. It is found that thinning the gate oxide results in increased damage up to a point. Beyond thiat, damage is reduced significantly due to direct tunneling current. Additionally, it is shown that diodes with breakdown voltages higher than oxide breakdown still offer protection against damage (piroportional to their area) while gated diodes offer improved protection. Elevated temperature during charging has been found to increase oxide degradation and PMOS structures have been found much more susceptible. Physical models are provided for these findings.
Archive | 1994
Robert S. Chau; Chan-Hong Chern; Shahriar Ahmed; Robert F. Hainsey; Robert J. Stoner; Todd Wilke; Leopoldo D. Yau
Archive | 1996
Scott E. Thompson; P. Packan; Tahir Ghani; Mark Stettler; Shahriar Ahmed; Mark Bohr
Archive | 1999
Sunit Tyagi; Shahriar Ahmed
Archive | 2003
Shahriar Ahmed; Ravindra Soman; Anand S. Murthy; Mark Bohr
Archive | 2000
Sunit Tyagi; Shahriar Ahmed
Archive | 2003
Ravindra Soman; Anand S. Murthy; Peter VanDerVoorn; Shahriar Ahmed
Archive | 2003
Shahriar Ahmed; Mark Bohr; Stephen Chambers; Richard Green; Anand S. Murthy
Archive | 2001
Shahriar Ahmed; Mark Bohr; Stephen Chambers; Richard Green
Archive | 1997
Scott E. Thompson; P. Packan; Tahir Ghani; Mark Stettler; Shahriar Ahmed; Mark Bohr
