Shahriar Ahmed

Effect Of MOS Device Scaling On Process Induced Gate Charging

Plasma induced gate charging damage is evaluated for advanced processes with ultra thin oxides. It is found that thinning the gate oxide results in increased damage up to a point. Beyond thiat, damage is reduced significantly due to direct tunneling current. Additionally, it is shown that diodes with breakdown voltages higher than oxide breakdown still offer protection against damage (piroportional to their area) while gated diodes offer improved protection. Elevated temperature during charging has been found to increase oxide degradation and PMOS structures have been found much more susceptible. Physical models are provided for these findings.