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Stefan Jakschik

Katholieke Universiteit Leuven

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Publication

Featured researches published by Stefan Jakschik.

Meeting Abstracts | 2006

Selective Epitaxy of Si/SiGe to improve pMOS devices by recessed Source/Drain and/or Buried SiGe Channels

Roger Loo; Peter Verheyen; Rita Rooyackers; Christian Walczyk; Frederik Leys; Denis Shamiryan; P. Absil; Tinne Delande; Alain Moussa; Hans Weijtmans; R. Wise; Vladimir Machkaoutsan; Chantal J. Arena; John McCormack; Sophie Passefort; Haruyuki Sorada; Akira Inoue; Byeong Chan Lee; Sangjin Hyun; Stefan Jakschik; Matty Caymax; Geert Eneman; Hugo Bender; Chris Drijbooms; Luc Geenen; Pierre Tomasini; Stéphane Godny

SiGe R. Loo, P. Verheyen, R. Rooyackers, C. Walczyk*, F.E. Leys, D. Shamiryan, P.P. Absil, T. Delande, A. Moussa, J.W. Weijtmans, R. Wise, V. Machkaoutsan, C. Arena, J. McCormack, S. Passefort, H. Sorada, A. Inoue, B.C. Lee, S. Hyun, S. Jakschik, and M. Caymax 1 IMEC, Kapeldreef 75, 3001 Leuven (Belgium), *also Universitat Siegen, Holderlinstrasse 35, 7068 Siegen (Germany), Texas Instruments Inc., 13560 North Central Expressway, Dallas (USA), ASM-Belgium, Kapeldreef 75, 3001 Leuven (Belgium), ASM-America, 3440 East University Drive, Phoenix, (USA), KLA-Tencor Corp. 160 Rio Robles, San Jose (USA), Matsushita assignee at IMEC, Samsung assignee at IMEC, Infineon assignee at IMEC

Archive | 2008

Method of fabricating multi-gate semiconductor devices with improved carrier mobility

Stefan Jakschik; Nadine Collaert

Archive | 2010

Multi-gate semiconductor devices with improved carrier mobility

Stefan Jakschik; Nadine Collaert

Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-based CMOS 4: New Materials, Processes, and Equipment. ECS Transactions | 2008

Ni(Pt)Si Thermal Stability Improvement By Carbon Implantation

Sofie Mertens; Thomas Hoffmann; C. Vrancken; Stefan Jakschik; Olivier Richard; Eveline Verleysen; Hugo Bender; Chao Zhao; Wilfried Vandervorst; P. Absil; Anne Lauwers

Archive | 2007

Multi-gate MOSFET device and method of manufacturing same

Nadine Collaert; Stefan Jakschik; Bart Degroote; Gabriela Dilliway; Frederik Leys

Archive | 2008

DUAL WORKFUNCTION SEMICONDUCTOR DEVICE

Stefan Jakschik; Jorge Kittl; Marcus Johannes Henricus van Dal; Anne Lauwers; Masaaki Niwa

Archive | 2008

Method of fabricating multi-gate semiconductor devices and devices obtained

Nadine Collaert; Stefan Jakschik

Archive | 2007

Halbleiterbauelement mit Gate-Elektroden mit unterschiedlicher Austrittsarbeit und seine Herstellungsmethode A semiconductor device having gate electrodes with different work functions and its production method

Stefan Jakschik; Jorge Kittl; Dal Marcus Johannes Henricus Van; Anne Lauwers; Masaaki Niwa

Archive | 2007

Semiconductor device with dual workfunction gate electrodes and its method of fabrication

Stefan Jakschik; Jorge Kittl; Dal Marcus Johannes Henricus Van; Anne Lauwers; Masaaki Niwa

Archive | 2007

Semiconductor device with dual workfunction gate electrodes

Stefan Jakschik; Jorge Kittl; Dal Marcus Johannes Henricus Van; Anne Lauwers; Masaaki Niwa

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Collaboration

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Anne Lauwers

Katholieke Universiteit Leuven

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Jorge Kittl

Samsung

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Dal Marcus Johannes Henricus Van

Texas Instruments

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Nadine Collaert

Katholieke Universiteit Leuven

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Masaaki Niwa

University of Tsukuba

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Frederik Leys

Katholieke Universiteit Leuven

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Hugo Bender

Katholieke Universiteit Leuven

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P. Absil

Katholieke Universiteit Leuven

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Alain Moussa

IMEC

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Bart Degroote

Katholieke Universiteit Leuven

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