Yuichi Mikata

Diffusion and Segregation of Carbon in SiO2 Films

Diffusion of carbon in SiO2 films and its segregation at the Si/SiO2 interface were investigated using carbon-incorporated borophosphosilicateglass (BPSG) films and carbon-implanted SiO2 films. It was found that carbon atoms diffuse in SiO2 film at a temperature as low as 500° C. Carbon atoms segregated at the Si/SiO2 interface and induced positive charge. The positive charge density was proportional to the segregated carbon concentration. Field emission transmission electron microscopy (FE-TEM) and electron energy loss spectra (EELS) observations revealed that carbon atoms exist on the SiO2 side of the interface, and another carbon-rich phase is formed in SiO2.

Virtual fab technology utility simulation and its application to 300mm CR facility design and energy reduction

A new concept for facility design and electric power/energy analysis is introduced We developed the virtual fab simulator comprising of the lot flow simulator and the utility simulator called as FRS, fab resource simulator. With this simulator, we can estimate more accurate utility, and evaluate the reduction items. N2 facility size, for example, can be reduced by over 50% compared with the conventional method. The simulator also can be applied to analyzing the electric power consumptions of tools and reveals that the idle state power occupies approximately 1/3 of the total tool consumptions. Thus the virtual fab simulator is quite useful for efficient facility design and its analysis

Gas cleaning technique for batch furnace at Agile-fab concept manufacturing

To satisfy both the quick turn around time and the process compatibility with the current product line at LPCVD process, the mini-batch furnace is one of the reasonable options. For the high tool utility and the capital scalability at small manufacturing line, the minibatch furnaces are required short time and high frequency tool cleaning for the low machine down time and process commonality for different kind of films LPCVD. In this paper, the short time and high frequency tool cleaning is proposed not only for productivity but also for particle controls.

Lateral Epitaxy of Si Films Deposited in a UHV Ambient by Electron Beam Annealing

Laterally seeded recrystallization of silicon layer evaporated in an ultra high vacuum has been studied experimentally by a scanning electron beam annealing. Silicon layer on the seed area was grown epitaxially during the evaporation. Silicon layer of above 1,pm thickness was successfully recrystallized, resultinq in reproducible latera.l epitaxy of 40 p* in length. A pseudo-line shaped electron beam formed by high frequenclz oscillation enabled dimensional enlargement of lateral epitaxial growth up to 200 pn in length. Crystalline properties vrere characterized by Rutherford backscatteringj measurement and electron channeling observation.