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Dive into the research topics where Benjamin T. Voegeli is active.

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Featured researches published by Benjamin T. Voegeli.


custom integrated circuits conference | 2009

Dual-loop direct VCO modulation for spread spectrum clock generation

Christopher D. LeBlanc; Benjamin T. Voegeli; Tian Xia

This paper presents a new spread spectrum clock generator (SSCG) circuit for EMI reduction. The proposed design adopts a standard integer-N phased locked loop (PLL) with two dual-voltage-controlled oscillators (VCOs). A frequency modulation loop is implemented with a digital frequency limit detector to direct the spectrum-spreading profile. An integrator is applied to generate the triangular modulation signal. Comparing with some recent designs [1,2,3,4] in the literature, the spread spectrum clock generator in this paper is simple and area efficient.


bipolar/bicmos circuits and technology meeting | 2008

A 0.24 μm SiGe BiCMOS technology featuring 6.5V CMOS, f T /f MAX of 15/14 GHz VPNP, and f T /f MAX of 60/125 GHz HBT

Panglijen Candra; Mattias E. Dahlstrom; Michael J. Zierak; Benjamin T. Voegeli; K. Watson; Peter B. Gray; Zhong-Xiang He; Robert M. Rassel; S. Von Bruns; Nicholas Theodore Schmidt; Renata Camillo-Castillo; R. Previty-Kelly; Michael L. Gautsch; A. Norris; M. Gordon; P. Chapman; Douglas B. Hershberger; J. Lukaitis; Natalie B. Feilchenfeld; Alvin J. Joseph; S. St Onge; James S. Dunn

For the first time, we report a 0.24 mum SiGe BiCMOS technology that offers full suite of active device including three distinct NPNs, a vertical PNP, CMOS supporting three different operating-voltages, and wide range of passive devices. In particular, this technology provides 6.5 V CMOS capability and VPNP with fT/fMAX of 15/14 GHz and BVCEO of 6.5 V which can be used to complement high breakdown NPN with fT of 30 GHz and BVceo of 6.0 V.


bipolar/bicmos circuits and technology meeting | 2005

High performance, low complexity vertical PNP BJT integrated in a 0.18/spl mu/m SiGe BiCMOS technology

Benjamin T. Voegeli; Peter B. Gray; B.A. Rainey; A.D. Strieker; Natalie B. Feilchenfeld; K. Watson; S. St Onge; James S. Dunn; Nicholas Theodore Schmidt; K.M. Newton; Jay Rascoe

An isolated vertical PNP BJT with f/sub T/ and f/sub MAX/ of 20GHz available as a modular component in a 0.18/spl mu/m SiGe BiCMOS technology is described. The VPNP device is fabricated using a low complexity integration scheme and is optimized to complement the high breakdown SiGe NPN HBT.


Archive | 2007

Lateral diffusion field effect transistor with a trench field plate

Natalie B. Feilchenfeld; Jeffrey P. Gambino; Louis D. Lanzerotti; Benjamin T. Voegeli; Steven H. Voldman; Michael J. Zierak


Archive | 2012

Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for bicmos integration

Natalie B. Feilchenfeld; Bradley A. Orner; Benjamin T. Voegeli


Archive | 2012

Lateral diffusion field effect transistor with drain region self-aligned to gate electrode

Natalie B. Feilchenfeld; Jeffrey P. Gambino; Xuefeng Liu; Benjamin T. Voegeli; Steven H. Voldman; Michael J. Zierak


Archive | 2007

LATERAL DIFFUSION FIELD EFFECT TRANSISTOR WITH ASYMMETRIC GATE DIELECTRIC PROFILE

James W. Adkisson; Natalie B. Feilchenfeld; Jeffrey P. Gambino; Benjamin T. Voegeli; Michael J. Zierak


Archive | 2005

VERTICAL PNP TRANSISTOR AND METHOD OF MAKING SAME

Peter B. Gray; Benjamin T. Voegeli


Archive | 2008

Modifying layout of IC based on function of interconnect and related circuit and design structure

James W. Adkisson; Natalie B. Feilchenfeld; Jeffrey P. Gambino; Howard S. Landis; Benjamin T. Voegeli; Steven H. Voldman; Michael J. Zierak


Archive | 2008

Vertical p-n junction device and method of forming same

Benjamin T. Voegeli; Steven H. Voldman

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