Frédéric Darracq

Backside SEU laser testing for commercial off-the-shelf SRAMs

This paper presents a new methodology for single-event upset laser testing of commercial off-the-shelf SRAMs. This methodology is based on backside laser test and is illustrated with some experimental results obtained with a new dedicated laser test bench.

Laser cross section measurement for the evaluation of single-event effects in integrated circuits

Abstract The cross section of ICs extracted from particles accelerator testing is extended to the pulsed laser testing. The extraction methodology attached to this new parameter is presented. It provides a new tool for integrated circuits reliability quantification, illustrated in the case of SEU sensitivity evaluation of a single SRAM cell.

Fundamentals of the Pulsed Laser Technique for single-event upset testing

This paper describes the use of a pulsed laser for studying radiation- induced single-event effects in integrated circuits. The basic failure mechanisms and the fundamentals of the laser testing method are presented. Sample results are presented to illustrate the benefits of using a pulsed laser for studying single-event upsets in memories.

Investigation on the SEL Sensitive Depth of an SRAM Using Linear and Two-Photon Absorption Laser Testing

Linear and two-photon laser testing is used to investigate the single-event latchup sensitive depth of SRAM CY7C1069 embedded in CARMEN satellite experiment. Results are discussed and compared with heavy ion and flight data.

Single-event sensitivity of a single SRAM cell

A test vehicle has been specially realized to demonstrate that different physical mechanisms are responsible for single-event upset phenomena within an elementary memory cell, depending on the impact location. Validation is performed using pulsed laser equipment.

Evaluation of recent technologies of non-volatile RAM

Two types of recent non-volatile random access memories (NVRAM) were evaluated for radiation effects: total dose and single event upset and latch-up under heavy ions and protons. Complementary irradiation with a laser beam provides information on sensitive areas of the devices.

Impact of negative bias temperature instability on the single-event upset threshold of a 65 nm SRAM cell

This paper presents experimental characterization of the impact of negative bias temperature instability on the single-event upset sensitivity of SRAM cells embedded in a 65 nm CMOS test vehicle. Pre and post-aging SEU threshold laser energy measurements indicate that the cells sensitivity increases over time. The results are confirmed by electrical simulation and the consequences in terms of SEU rate prediction are discussed.

Negative Bias Temperature Instability Effect on the Single Event Transient Sensitivity of a 65 nm CMOS Technology

Impact of NBTI degradation on the SET sensitivity of 65 nm CMOS test structures is investigated. Pre- and post-aging SET laser thresholds measurements on chains of gates indicate a decrease of SET sensitivity due to NBTI.

Investigation of single event burnout sensitive depth in power MOSFETS

The depth of the Single-event burnout sensitive volume of power MOSFETs is investigated using TCAD simulation and TPA laser testing approaches.

Application of various optical techniques for ESD defect localization

Various optical defect localization techniques are applied on the same integrated circuits (IC). These circuits were previously stressed by Electro Static Discharges (ESD) to create defects. The results obtained by each technique were analyzed to determine the nature of the defects. The different data are compared to assess their sensitivity and to evaluate the contribution of each technique in a failure analysis flow.