Pascal Fouillat

Scaling Rules For Mos Analog Design Reuse

In this paper we propose a methodology for analog design reuse during technology scaling. This method is based on resizing rules resulting in the application of a MOS transistor model. The aims of this scaling are the conservation of the performances of the original circuit and the reduction of power consumption and area. This resizing methodology has been applied on different analog circuits. The original circuit has been designed in 0.8 mum AMS technology with a supply voltage of 5 V and then scaled in 0.35 mum AMS technology with a 3.3 V supply voltage. Finally, the methodology is validated by simulation results

A CMOS Resizing Methodology for Analog Circuits

This article presents a CMOS resizing methodology for analog circuits during a technology migration, with easy-to-apply scaling rules based on a simple MOS transistor model. The goals are to transpose a circuit topology from one technology to another while preserving the main figures of merit and to quickly calculate the new transistor dimensions.

Behavioral modeling of noise in discrete time systems with VHDL-AMS application to a sigma-delta modulator

This paper presents the behavioral models of sigma-delta modulators and transient noise sources, using the standard language VHDL-AMS. The models are implemented in the time domain and their generic parameters are related to spectral characteristics. The objective of this work is to simulate noise effects in discrete time circuits and systems (like switched capacitors systems) at the behavioral level in order to minimize the simulation runtime required to evaluate and quantify the systems performance.

Modélisation des effets des radiations sur les transistors bipolaires

. Under the effect of radiation, bipolar transistors undergo deterioration that can lead to dysfunction. . This article discusses simulation work undertaken to investigate these phenomena, with a view to integrating allowance for radiation damage at the component design stage.