Gonzalo Picun

Fully-Depleted SOI CMOS Technology for Heterogeneous Micropower, High-Temperature or RF Microsystems

Based on an extensive review of research results on the material, process, device and circuit properties of thin-film fully depleted SOI CMOS, our work demonstrates that such a process with channel lengths of about 1 mum may emerge as a most promising and mature contender for integrated microsystems which must operate under low-voltage low-power conditions, at microwave frequencies and/or in the temperature range 200-350 degreesC

A low-power 5 GHz CMOS LC-VCO optimized for high-resistivity SOI substrates

This paper discusses the power saving of an LC-VCO designed on high-resistivity SOI substrates (/spl rho/ > 1000/spl Omega//spl middot/cm). It demonstrates the drastic improvement in the varactors and inductors quality factor on these substrates. It stresses on the importance of optimizing the tank inductor and the VCO for high-resistivity substrates. A 5GHz VCO designed in a 0.13/spl mu/m partially depleted SOI CMOS confirms the low-power performance with a figure-of-merit greater than 190, placing this design at the top of the state-of-the-art.

Intelligent SOI CMOS integrated circuits and sensors for heterogeneous environments and applications

In this paper, we demonstrate how a simple fully-depleted SOI CMOS process can be adapted to provide a wide range of performance compatible with the realization of heterogeneous micropower, high-temperature or RF micro-systems which involve the integration of sensing, analog and digital components. High-temperature and low-voltage examples are discussed.

Analog and RF SOI Circuits for Low Power and Harsh Environment Applications

In this paper we will present two applications: high temperature electronics where SOI has a monopole for temperature between 200degC and 300degC and RF electronics where SOI has interesting performances compare to bulk. SOI is an enabling technology for high temperatures with an easier design technique. There are several SOI processes dedicated to RF applications and their main advantage will be on applications where RF, analog and digital circuits are combined in a single SoC design.

High-Temperature Self-Supplied Isolated Driver Module for GaN Power Transistors

Abstract In this paper, a compact isolated and self-supplied single channel driver module for operation at 200C (392F) is presented. It is aimed to drive a normally-on GaN device within a high volt...

New High Temperature Electronic Components for Power Management and Motor Control Applications

This paper presenst CISSOIDs new high temperature chips for Power Management and Motor Control in automotive, oil & gas, aerospace and industrial applications. High temperature DC-DC reference designs, called respectively ETNA, VESUVIO™ and EREBUS™, have been announced recently. These Buck (step-down) DC-DC converters are built with proven CISSOID products as active components rated from −55°C up to 225°C. These DC-DC converters can have input voltages from 6V up to 50V. The output voltage can be adjusted from 10% up to 90% of the input voltage. Power efficiencies in excess of 90% above 200°C have been demonstrated. VESUVIO™ and EREBUS™ are based on MAGMA PWM controller, HYPERION half-bridge driver and two power transistors to implement a synchronous Buck converter. For high voltage and power levels, new Silicon-Carbide devices allow operating at high junction temperatures. They enable high power modules with higher densities in terms of size and weight. Having power drivers able to operate very close to...