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Joe Bloomquist

Advanced Micro Devices

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Publication

Featured researches published by Joe Bloomquist.

Archive | 2006

SOI TRANSISTOR HAVING A REDUCED BODY POTENTIAL AND A METHOD OF FORMING THE SAME

Jan Hoentschel; Andy Wei; Joe Bloomquist; Manfred Horstmann

Archive | 2010

TECHNIQUE FOR PROVIDING STRESS SOURCES IN TRANSISTORS IN CLOSE PROXIMITY TO A CHANNEL REGION BY RECESSING DRAIN AND SOURCE REGIONS

Andy Wei; Thorsten Kammler; Jan Hoentschel; Manfred Horstmann; Peter Javorka; Joe Bloomquist

Archive | 2007

METHOD OF INCREASING TRANSISTOR PERFORMANCE BY DOPANT ACTIVATION AFTER SILICIDATION

Patrick Press; Thomas Feudel; Joe Bloomquist; Manfred Horstmann

Archive | 2008

Method of forming a semiconductor structure comprising an implantation of ions in a material layer to be etched

Patrick Press; Frank Wirbeleit; Joe Bloomquist; Kai Frohberg; Thomas Feudel

Archive | 2007

FIELD EFFECT TRANSISTOR COMPRISING A STRESSED CHANNEL REGION AND METHOD OF FORMING THE SAME

Christoph Schwan; Joe Bloomquist; Kai Frohberg; Manfred Horstmann

Archive | 2006

Technik zur Bereitstellung von Verspannungsquellen in Transistoren in unmittelbarer Nähe zu einem Kanalgebiet durch Vertiefen von Drain- und Source-Gebieten

Andy Wei; Thorsten Kammler; Jan Hoentschel; Manfred Horstmann; Peter Javorka; Joe Bloomquist

Archive | 2006

Transistor mit abgesenkten Drain- und Source-Gebieten und Verfahren zur Herstellung desselben

Joe Bloomquist; Jan Hoentschel; Manfred Horstmann; Peter Javorka; Thorsten Kammler; Andy Wei

Archive | 2007

Method of making a semiconductor device comprising isolation trenches inducing different types of strain

Christoph Schwan; Joe Bloomquist; Peter Javorka; Manfred Horstmann; Sven Beyer; Markus Forsberg; Frank Wirbeleit; Karla Romero

Archive | 2008

Verfahren zum Ausbilden einer Halbleiterstruktur, das eine Implantation von Ionen in eine zu ätzende Materialschicht umfasst

Patrick Press; Frank Wirbeleit; Joe Bloomquist; Kai Frohberg; Thomas Feudel

Archive | 2007

Verfahren zur Steigerung des Transistorsleitungsvermögens durch Dotierstoffaktivierung nach der Silizidierung

Patrick Press; Thomas Feudel; Joe Bloomquist; Manfred Horstmann

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Manfred Horstmann

GlobalFoundries

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Peter Javorka

Advanced Micro Devices

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Manfred Horstmann

GlobalFoundries

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Frank Wirbeleit

Advanced Micro Devices

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Kai Frohberg

Advanced Micro Devices

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Patrick Press

Advanced Micro Devices

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Thomas Feudel

Advanced Micro Devices

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Thorsten Kammler

Advanced Micro Devices

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Andy Wei

GlobalFoundries

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Andy Wei

GlobalFoundries

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