Martin Jay Seamons

Defect gallery and bump defect reduction in the self Aligned Double Patterning module

The Self Aligned Double Patterning (SADP) module is one scheme to form 3X or 2X line structures by using a dry scanner or immersion scanner. After reliable processes are developed, defect data collection, understanding, characterization, and reduction become important. The learning we obtained at the Mayden Technology Center at Applied Materials reduced ramp time at our customer sites and provided new directions to improve our processes. In this paper, the defect type and evaluation per process to the final 3X or 2X structures in SADP flow are discussed. An in-depth study of the impact of bump defects, bump formation, and a potential solution involving an improved film deposition process are presented.

Wafer edge polishing process for defect reduction during immersion lithography

The objective of this study was to examine the defect reduction effect of the wafer edge polishing step on the immersion lithography process. The experimental wafers were processed through a typical front end of line device manufacturing process and half of the wafers were processed with the wafer edge polishing just prior to the immersion lithography process. The experimental wafers were then run through two immersion lithography experiments and the defect adders on these wafers were compared and analyzed. The experimental results indicated a strong effect of the edge polishing process on reducing the particle migration from the wafer edge region to the wafer surface during the immersion lithography process.

Resist Poisoning-Free Advanced PECVD-Based Anti-Reflective Coating (ARC) for 90nm Technology and Beyond

A nitrogen-free (N-free) dielectric anti-reflective coating (DARC®) was cost-effectively developed in a plasma-enhanced chemical vapor deposition (PECVD) reactor to eliminate the 193nm resist poisoning interaction caused when N 2 O is used as a precursor [1]. Although it was found that even a N-free ARC could poison sensitive 193nm resists with –OH radicals [2], which either exist inherently in the ARC or result from H 2 O absorption by the ARC surface, the current investigation has revealed that it was possible to minimize resist poisoning. Our investigation showed that compressive film stress directly correlates to H 2 O resistance. Therefore, it was possible to greatly improve the ARC resistance to H 2 O absorption by creating and maintaining a process regime that makes the ARC film dense. The dense ARC film demonstrated promising lithography performance with minimal resist poisoning as well as excellent shelf life and O 2 -ashing resistance. This paper explores the N-free DARC material, its development, lithographic integration results and implementation in a production environment to eliminate 193nm resist poisoning.