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Dive into the research topics where Mary E. Weybright is active.

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Featured researches published by Mary E. Weybright.


international memory workshop | 2010

High performance Flash memory for 65 nm embedded automotive application

Fausto Piazza; Christian Boccaccio; S. Bruyere; Riccardo Cea; Bill Clark; Nicolas Degors; Christopher N. Collins; Anna Gandolfo; Annalisa Gilardini; Enrico Gomiero; Pier Marie Mans; Gianfranco Mastracchio; David Pacelli; N. Planes; Jacques Simon; Mary E. Weybright; Alfonso Maurelli

In this paper the results obtained for a new process flow that integrates a high performance flash cell for automotive application with a state of the art 65nm CMOS have been presented. Despite the several specific process steps introduced for the first time on embedded technologies, the MOS performances have not been impacted by the integration of the Flash cell and the related HV MOS and the results obtained on a 4Mbit Flash array are very promising.


Archive | 1999

Method for fabricating dual workfunction devices on a semiconductor substrate using counter-doping and gapfill

Carl J. Radens; Mary E. Weybright


Archive | 2001

Gate processing method with reduced gate oxide corner and edge thinning

Helmut Tews; Oleg Gluschenkov; Mary E. Weybright


Archive | 2000

Integrated circuit using damascene gate structure

Carl J. Radens; Mary E. Weybright; Gary B. Bronner


Archive | 2002

Modified gate processing for optimized definition of array and logic devices on same chip

Mary E. Weybright; Gary B. Bronner; Richard A. Conti; Ramachandra Divakaruni; Jeffrey P. Gambino; Peter D. Hoh; Uwe Schroeder


Archive | 1999

Method of fabricating an integrated circuit of logic and memory using damascene gate structure

Carl J. Radens; Mary E. Weybright; Gary B. Bronner


Archive | 2000

Fully encapsulated damascene gates for Gigabit DRAMs

Ramachandra Divakaruni; Jeffrey P. Gambino; Jack A. Mandelman; Viraj Y. Sardesai; Mary E. Weybright


Archive | 2000

Gate prespacers for high density, high performance drams

Ramachandra Divakaruni; James W. Adkisson; Mary E. Weybright; Scott Halle; Jeffrey P. Gambino; Heon Lee


Archive | 2000

Dual gate oxide process for uniform oxide thickness

Helmut Tews; Mary E. Weybright; Stephan Kudelka; Oleg Gluschenkov; Suri Hegde


Archive | 2004

Self-aligned drain/channel junction in vertical pass transistor dram cell design for device scaling

Geng Wang; Kevin McStay; Mary E. Weybright; Y. Li; Dureseti Chidambarrao

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