Richard J. Huang

Simplified dual damascene process for multi-level metallization and interconnection structure

Landing pad technology doubled up as local interconnect and borderless contact for deep sub-half micrometer IC application

Use of diamond as a hard mask material

Method of using amorphous carbon as spacer material in a disposable spacer process

Photoresist stripping without degrading low dielectric constant materials

Use of amorphous carbon for gate patterning

Integration of low-k SiOF for damascene structure

Methods of manufacture of uniform spin-on films

TUNNELING TECHNOLOGY FOR REDUCING INTRA-CONDUCTIVE LAYER CAPACITANCE

Surface treatment of low-K SiOF to prevent metal interaction