Seiyon Kim

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Featured researches published by Seiyon Kim.

international electron devices meeting | 2012

Kelin J. Kuhn; Uygar E. Avci; Annalisa Cappellani; Martin D. Giles; Michael G. Haverty; Seiyon Kim; Roza Kotlyar; Sasikanth Manipatruni; Dmitri E. Nikonov; Chytra Pawashe; Marko Radosavljevic; Rafael Rios; Sadasivan Shankar; Ravi Vedula; Robert S. Chau; Ian Young

For the past 40 years, relentless focus on Moores Law transistor scaling has delivered ever-improving CMOS transistor density. This paper discusses architectural and materials options which will contribute to the ultimate CMOS device. In addition, the paper reviews device options beyond the ultimate CMOS device.

symposium on vlsi technology | 2010

Seiyon Kim; Ricky Tseng; Ben Jin; Uday Shah; Ibrahim Ban; Uygar E. Avci; Peter L. D. Chang

A 15-nm node floating body cell (FBC) memory was demonstrated utilizing silicon on replacement insulator (SRI) technology on bulk substrate. Highly selective SiGe etch and nano-scale anchors enabled the fabrication of silicon on thin replacement oxide of 12 nm. The memory characteristics show a memory signal of 7 µA and disturb retention time of 20 ms for a 51-nm gate length and 77-nm width device. This is the best FBC memory performance reported on bulk substrate.

Archive | 2011