Shigeki Komori

Self-gettering and proximity gettering for buried layer formation by MeV ion implantation

The authors studied the characteristics of the junction leakage current of diodes having a buried layer formed by high-energy boron, phosphorus, and arsenic implantation. A remarkable decrease in junction leakage current to the level comparable to that without a buried layer was observed with doses of over 3*10/sup 14/ ions/cm/sup 2/ (self-gettering). The effects of additional high-energy carbon, oxygen, and fluorine implantation on the buried layer were also investigated. A strong gettering effect in reducing the leakage current of the diode was found (proximity gettering). The gettering by secondary defects induced by high-energy ion implantation is found to be a major cause of these phenomena.<<ETX>>

A novel double well with buffer N/sup -/ and P/sup +/ gettering layers for suppression of soft error rate (DOWNSER)

A novel double well with buffer n/sup -/ and gettering layers structure for strong suppression of SER (DOWNSER) is briefly presented in this paper. The mechanisms for reduction of SER have been investigated by experimental and simulation studies. The buffer n/sup -/ and the gettering layer in DOWNSER structure play the important role in cutting off the minority carrier generated from the incident alpha particle in the p-type region or the reverse biased junction.<<ETX>>

The impact of high pressure dry O/sub 2/ oxidation on sub-quarter micron planarized LOCOS

Recessed LOCOS isolation using high pressure dry O/sub 2/ oxidation has been studied. The effect of the high pressure dry O/sub 2/ oxidation on the birds beak encroachment was clarified. This advanced LOCOS process was found to provide superior gate oxide integrity and junction characteristics. It meets the required isolation characteristics for 256 Mbit DRAM and beyond while maintaining the process simplicity.